OPTICAL MODULATOR WITH PIXELIZATION PATTERNS

• US 20100163889A1
• Filed: 12/22/2009
• Published: 07/01/2010
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHO, Soo-haeng, PARK, Yong-hwa, CHO, Yong-chul
• Granted Patent: US 8,436,370 B2
• Time in Patent Office: Days
• US Class Current: 257/84
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H01L 31/145 the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate

Abstract

Provided is an optical modulator having pixelization patterns. The optical modulator includes an optical-electric (O-E) conversion element converting input optical images to current signals using the photoelectric effect, and an electric-optical (E-O) conversion element that emits light using the current signals transferred from the O-E conversion element. Trenches are formed from at least a surface of the optical modulator to a predetermined depth in the optical modulator so as to block or reduce electrical interference between pixels when the electric signals are transferred from the O-E conversion element to the E-O conversion element.

Claims

1. An optical modulator comprising:

an optical-electric (O-E) conversion element that converts an optical image into signals through a photoelectric effect;

an electric-optical (E-O) conversion element that emits light using the signals from the O-E conversion element; and

a trench having a predetermined depth from at least a surface of the optical modulator to block or reduce electric interferences between pixels when the signals are transferred from the O-E conversion element to the E-O conversion element.

2. The optical modulator of claim 1, wherein the trench is formed to the predetermined depth from the O-E conversion element into the optical modulator toward the E-O conversion element.

3. The optical modulator of claim 1, wherein the trench is formed to the predetermined depth from the E-O conversion element into the optical modulator toward the O-E conversion element.

4. The optical modulator of claim 1, wherein the predetermined depth is a first predetermined depth and the trench is formed to the first predetermined depth from the O-E conversion element into the optical modulator toward the E-O conversion element and formed to a second predetermined depth from the E-O conversion element into the optical modulator toward the O-E conversion element so as to be formed on both sides of the optical modulator.

5. The optical modulator of claim 1, wherein the trench completely penetrates the optical modulator from the O-E conversion element to the E-O conversion element.

6. The optical modulator of claim 1, wherein the trench comprises a tapered shape or a stepped shape so that a cross-sectional width of the trench varies according to a depth in the optical modulator.

7. The optical modulator of claim 1, wherein the trench is of a plurality of trenches and the plurality of trenches is of one of a discrete trench pattern, in which the plurality of trenches are discretely disposed around pixels so that one pixel is electrically connected to adjacent pixels at four points, a cross-shaped trench pattern, in which one pixel is electrically connected to adjacent pixels at two points and four adjacent pixels are connected to each other at one connection point, and a branch-shaped trench pattern, in which one pixel is electrically connected to adjacent pixels at two points and one connection point is located at center portions of circumferences defining the pixels or at corners of the circumference.

8. The optical modulator of claim 7, further comprising a transferring element which transfers the current signals from the O-E conversion element to the E-O conversion element, and is disposed between the O-E conversion element and the E-O conversion element.

9. The optical modulator of claim 8, wherein the transferring element comprises a semiconductor substrate.

10. The optical modulator of claim 8, wherein the trench of the plurality of trenches is formed to the predetermined depth from the surface of the optical modulator into the transferring element.

11. The optical modulator of claim 8, wherein a first transparent electrode is formed on an optical image incident surface of the optical modulator, a second transparent electrode is formed on an optical image output surface of the optical modulator, and an internal electrode is formed between the O-E conversion element and the E-O conversion element.

12. The optical modulator of claim 1, further comprising a transferring element which transfers the current signals from the O-E conversion element to the E-O conversion element, and is disposed between the O-E conversion element and the E-O conversion element.

13. The optical modulator of claim 12, wherein the transferring element comprises a semiconductor substrate.

14. The optical modulator of claim 12, wherein the trench is formed to the predetermined depth from a surface of the optical modulator into the transferring element.

15. The optical modulator of claim 12, wherein a first transparent electrode is formed on an optical image incident surface of the optical modulator, a second transparent electrode is formed on an optical image output surface of the optical modulator, and an internal electrode is formed between the O-E conversion element and the E-O conversion element.