SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20100163893A1
• Filed: 08/06/2009
• Published: 07/01/2010
• Est. Priority Date: 08/12/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: JEONG, Hwan Hee
• Granted Patent: US 9,577,145 B2
• Time in Patent Office: Days
• US Class Current: 257/91
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Abstract

Provided is a semiconductor light emitting device.

The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.

Claims

1. A semiconductor light emitting device, comprising:

a second electrode layer;

a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer;

at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and

a first electrode under the light emitting structure.

2. The semiconductor light emitting device according to claim 1, comprising:

an ohmic contact layer between the second electrode layer and the light emitting structure.

3. The semiconductor light emitting device according to claim 2, comprising:

an protection layer comprising at least one of insulating material and transparent material at the outer circumference of the bottom surface of the second electrode layer.

4. The semiconductor light emitting device according to claim 1, comprising:

a conductive supporting member on the second electrode layer.

5. The semiconductor light emitting device according to claim 2, wherein the ohmic contact layer is in a layer shape or in a plural pattern shape.

6. The semiconductor light emitting device according to claim 2, wherein the plural pattern of the ohmic contact layer is formed on the positions corresponding to the dividing grooves.

7. The semiconductor light emitting device according to claim 2, wherein the ohmic contact layer comprises at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

8. The semiconductor light emitting device according to claim 2, wherein the light emitting structure comprises a first conductive type semiconductor layer disposed the first electrode thereunder, an active layer on the first conductive type semiconductor layer;

and a second conductive type semiconductor layer between the active layer and the ohmic contact layer.

9. The semiconductor light emitting device according to claim 8, wherein the dividing groove is formed having a depth to the extent that the second conductive type semiconductor layer or the ohmic contact layer is exposed from the inner side of the under surface of the first conductive type semiconductor layer.

10. The semiconductor light emitting device according to claim 8, wherein the first electrode have an open loop configuration and/or a close loop configuration that they are connected to the under surface of the first conductive type semiconductor divided by the dividing grooves

11. A semiconductor light emitting device, comprising:

a second electrode layer comprising a reflective electrode;

an ohmic contact layer under the second electrode layer;

a light emitting structure comprising a plurality of compound semiconductor layers comprising a second conductive type semiconductor layer under the ohmic contact layer;

at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and

a first electrode under the light emitting structure.

12. The semiconductor light emitting device according to claim 11, wherein the ohmic contact layer is formed in a layer shape or a plural pattern shape, and the dividing grooves comprises insulating material or resin material.

13. The semiconductor light emitting device according to claim 11, comprising:

a protecting layer comprising at least one of insulating material and transparent material in a ring configuration or in loop configuration along the outer circumference of the top surface of the light emitting structure; and

a conductive supporting member on the second electrode layer.

14. The semiconductor light emitting device according to claim 11, wherein the dividing groove is formed having a depth that the second conductive type semiconductor layer is exposed on the lower layer of the light emitting structure, having at least one configuration of a straight line configuration, a bent configuration, a branched branch configuration, a multi-branch windows configuration, an open type characters configuration.

15. The semiconductor light emitting device according to claim 13, wherein the top surface of the protecting layer is exposed to the outer part of the light emitting structure, the protecting layer comprising at least one of SiOx, SiNx, Al₂O₃, TiO₂, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

16. A semiconductor light emitting device, comprising:

a conductive supporting member;

a second electrode layer comprising a reflective electrode under the conductive supporting member;

an ohmic contact layer under at least a portion of the second electrode layer;

a light emitting structure comprising a plurality of compound semiconductor layers under the ohmic contact layer; and

a plurality of dividing grooves spaced from each other on the inner sides of the lower layers of the light emitting structure, having a predetermined depth.

17. The semiconductor light emitting device according to claim 16, comprising:

a protecting layer comprising at least one of insulating material and transparent material, the protecting layer having an inner side that is disposed at the outer circumference of the under surface of the second electrode layer and an outer side that is exposed to the outer part of the light emitting structure.

18. The semiconductor light emitting device according to claim 16, wherein the ohmic contact layer is formed in a layer shape or a pattern shape that corresponds to the dividing groove.

19. The semiconductor light emitting device according to claim 17, wherein the ohmic contact layer and the protecting layer comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

20. The semiconductor light emitting device according to claim 17, wherein the light emitting structure comprises a second conductive type semiconductor layer under the second electrode layer;

an active layer with the dividing groove under the second conductive type semiconductor layer;

a first conductive type semiconductor layer with the dividing grooves under the active layer; and

first electrode under the divided areas of the first conductive type semiconductor layer.