LIGHT EMITTING DEVICE
First Claim
1. A light emitting device having a first-conduction-type cladding layer, an active layer structure, and a second-conduction-type cladding layer, each of which comprises a III-V compound semiconductor, said active layer structure being located between said first-conduction-type cladding layer and said second-conduction-type cladding layer, said light emitting device comprising:
- a first-conduction-type-side electrode configured to inject carriers into said first-conduction-type cladding layer; and
a second-conduction-type-side electrode configured to inject carriers into said second-conduction-type cladding layer,wherein said first-conduction-type-side electrode has an opening, and said second-conduction-type-side electrode has a main-electrode-portion partially surrounded by said first-conduction-type-side electrode, and an extracting portion configured to extract said main-electrode-portion outside said first-conduction-type-side electrode through the opening, andsaid main-electrode-portion is a part of a curve of constant width or a constant-width figure, and an interval between an outer edge of said main-electrode-portion and an inner edge of said first-conduction-type-side electrode is substantially constant.
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Accused Products
Abstract
Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (7) for injecting carriers into the first-conduction-type cladding layer, and a second-conduction-type-side electrode (6) for injecting carriers into the second-conduction-type cladding layer. The first-conduction-type-side electrode (7) has an opening (7p). The second-conduction-type-side electrode (6) has a main-electrode-portion (6-0) partially surrounded by the first-conduction-type-side electrode (7), and extracting portions (6-1, 6-2) for extracting the main-electrode-portion (6x-0) outside the first-conduction-type-side electrode (7) though the opening (7p). The main-electrode-portion (6-0) is a part of a constant-width figure. The interval between the outer edge of the main-electrode-portion (6-0) and the inner edge of the first-conduction-type-side electrode (7) is almost constant.
55 Citations
24 Claims
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1. A light emitting device having a first-conduction-type cladding layer, an active layer structure, and a second-conduction-type cladding layer, each of which comprises a III-V compound semiconductor, said active layer structure being located between said first-conduction-type cladding layer and said second-conduction-type cladding layer, said light emitting device comprising:
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a first-conduction-type-side electrode configured to inject carriers into said first-conduction-type cladding layer; and a second-conduction-type-side electrode configured to inject carriers into said second-conduction-type cladding layer, wherein said first-conduction-type-side electrode has an opening, and said second-conduction-type-side electrode has a main-electrode-portion partially surrounded by said first-conduction-type-side electrode, and an extracting portion configured to extract said main-electrode-portion outside said first-conduction-type-side electrode through the opening, and said main-electrode-portion is a part of a curve of constant width or a constant-width figure, and an interval between an outer edge of said main-electrode-portion and an inner edge of said first-conduction-type-side electrode is substantially constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A light emitting device having a first-conduction-type cladding layer, an active layer structure, and a second-conduction-type cladding layer, each of which comprises a III-V compound semiconductor, said active layer structure being sandwiched between said first-conduction-type cladding layer and said second-conduction-type cladding layer, said light emitting device comprising:
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a first-conduction-type-side electrode configured to inject carriers into said first-conduction-type cladding layer; and a second-conduction-type-side electrode configured to inject carriers into said second-conduction-type cladding layer, wherein said first-conduction-type-side electrode has an opening, and said second-conduction-type-side electrode has a main-electrode-portion partially surrounded by said first-conduction-type-side electrode, and an extracting portion configured to extract said main-electrode-portion outside said first-conduction-type-side electrode through the opening, and said extracting portion includes a first extracting portion extending through the opening, and a second extracting portion formed along a part of an outer edge of said first-conduction-type-side electrode.
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24. A light emitting device having a first-conduction-type cladding layer, an active layer structure, and a second-conduction-type cladding layer, each of which comprises a III-V compound semiconductor, said active layer structure being sandwiched between said first-conduction-type cladding layer and said second-conduction-type cladding layer, said light emitting device comprising:
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a first-conduction-type-side electrode configured to inject carriers into said first-conduction-type cladding layer; and a second-conduction-type-side electrode configured to inject carriers into said second-conduction-type cladding layer, wherein said first-conduction-type-side electrode includes a straight portion having an outer edge formed by straight lines, and has an opening in a substantially central portion of said straight portion, and said second-conduction-type-side electrode has a main-electrode-portion partially surrounded by said first-conduction-type-side electrode, and an extracting portion configured to extract said main-electrode-portion outside said first-conduction-type-side electrode through the opening.
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Specification