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LIGHT EMITTING DEVICE

  • US 20100163895A1
  • Filed: 01/26/2007
  • Published: 07/01/2010
  • Est. Priority Date: 02/08/2006
  • Status: Active Grant
First Claim
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1. A light emitting device having a first-conduction-type cladding layer, an active layer structure, and a second-conduction-type cladding layer, each of which comprises a III-V compound semiconductor, said active layer structure being located between said first-conduction-type cladding layer and said second-conduction-type cladding layer, said light emitting device comprising:

  • a first-conduction-type-side electrode configured to inject carriers into said first-conduction-type cladding layer; and

    a second-conduction-type-side electrode configured to inject carriers into said second-conduction-type cladding layer,wherein said first-conduction-type-side electrode has an opening, and said second-conduction-type-side electrode has a main-electrode-portion partially surrounded by said first-conduction-type-side electrode, and an extracting portion configured to extract said main-electrode-portion outside said first-conduction-type-side electrode through the opening, andsaid main-electrode-portion is a part of a curve of constant width or a constant-width figure, and an interval between an outer edge of said main-electrode-portion and an inner edge of said first-conduction-type-side electrode is substantially constant.

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