SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE PACKAGE HAVING THE SAME

• US 20100163904A1
• Filed: 12/28/2009
• Published: 07/01/2010
• Est. Priority Date: 12/29/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: PARK, Hyung Jo
• Granted Patent: US 8,853,719 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.

Claims

1. A semiconductor light-emitting device comprising:

a light-emitting structure comprising a plurality of compound semiconductor layers having a rounded side surface at an outer edge;

a first electrode unit on the light-emitting structure; and

a second electrode layer under the light-emitting structure.

2. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure comprises a pillar shape.

3. The semiconductor light-emitting device according to claim 1, comprising a channel layer around a region between the second electrode layer and the light-emitting structure.

4. The semiconductor light-emitting device according to claim 3, wherein the channel layer comprises at least one of SiO₂, SiO_x, SiO_xN_y, Si₃N₄, Al₂O₃, TiO₂, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), and GZO (gallium zinc oxide).

5. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises a first conductivity type semiconductor layer under the first electrode unit;

an active layer under the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer between the active layer and the second electrode layer.

6. The semiconductor light-emitting device according to claim 5, comprising at least one of an N-type semiconductor layer and an ohmic layer between the second conductivity type semiconductor layer and the second electrode layer.

7. The semiconductor light-emitting device according to claim 5, wherein the first electrode unit comprises:

a first electrode pad on the first conductivity type semiconductor layer;

a first pattern branched from the first electrode pad; and

a second pattern connected to the end of the first pattern.

8. The semiconductor light-emitting device according to claim 7, wherein the first pattern is branched outward from the first electrode pad in at least one shape, and the second pattern is formed in a circular shape or in the same shape as the outer shape of the first conductivity type semiconductor layer.

9. The semiconductor light-emitting device according to claim 1, comprising a conductive support member under the second electrode layer.

10. The semiconductor light-emitting device according to claim 2, wherein the light-emitting structure has the radius of the edge circumference that is about ½

or more of the radius of a circle from the center of the light-emitting structure to the outside.

11. A semiconductor light-emitting device comprising:

a cylindrical light-emitting structure comprising a plurality of compound semiconductor layers;

a polygonal second electrode layer under the light-emitting structure;

a first electrode pad on the light-emitting structure; and

a loop-type pattern disposed along the top edge of the light-emitting structure and connected electrically to the first electrode pad.

12. The semiconductor light-emitting device according to claim 11, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises an N-type semiconductor layer under the first electrode unit;

an active layer under the N-type semiconductor layer; and

a P-type semiconductor layer under the active layer.

13. The semiconductor light-emitting device according to claim 11, wherein the second electrode layer comprises a reflective metal of a polygonal plate shape, and the semiconductor light-emitting device comprises a conductive support member under the second electrode layer.

14. The semiconductor light-emitting device according to claim 12, wherein the compound semiconductor layers comprise disk shapes with the same diameter or different diameters.

15. The semiconductor light-emitting device according to claim 12, comprising a transparent channel layer at an outer edge between the P-type semiconductor layer and the second electrode layer, and the channel layer comprises at least one of an oxide-based material and a nitride-based material.

16. The semiconductor light-emitting device according to claim 11, wherein the loop-type pattern comprises a circular pattern or a curved pattern.

17. The semiconductor light-emitting device according to claim 11, wherein an outer side of the second electrode layer is extended outward from an outer side of the light-emitting structure.

18. The semiconductor light-emitting device according to claim 12, wherein the P-type semiconductor layer has a larger diameter than the N-type semiconductor layer.

19. A light-emitting device package comprising:

a cylindrical light-emitting device comprising;

a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;

a polygonal second electrode layer under the second conductivity type semiconductor layer; and

a first electrode unit on the first conductivity type semiconductor layer;

a body unit having an opened cavity at the top; and

a plurality of lead electrodes disposed in the cavity of the body unit and connected electrically to the first electrode unit and the second electrode layer.

20. The light-emitting device package according to claim 19, comprising a resin material formed in the cavity.