Light emitting device having vertical structrue and method for manufacturing the same

• US 20100163908A1
• Filed: 02/04/2010
• Published: 07/01/2010
• Est. Priority Date: 03/14/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation), LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Hyun Jae, Jang, Jun Ho
• Granted Patent: US 8,203,162 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

Claims

1-20. -20. (canceled)

21. A light emitting device having a vertical structure, comprising:

a conductive support structure comprising a support layer;

a bonding layer on the conductive support structure;

a first electrode on the bonding layer, the first electrode comprising an ohmic electrode and a reflective electrode;

a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer;

a semiconductor structure having multi-layers on the first electrode, the semiconductor structure having an inclined side surface; and

a second electrode on the semiconductor structure.

22. The light emitting device according to claim 21, wherein the bonding layer is configured to enhance an adhesion between the conductive support structure and the metal layer.

23. The light emitting device according to claim 21, wherein the surface area of the first electrode facing the semiconductor structure is smaller than the surface area of the conductive support structure facing the bonding layer.

24. The light emitting device according to claim 21, wherein the surface area of the semiconductor structure facing the first electrode is smaller than the surface area of the conductive support structure facing the bonding layer.

25. The light emitting device according to claim 21, wherein the metal layer includes at least one of In, Sn, Ag, Au, Pt and Al.

26. The light emitting device according to claim 21, wherein the metal layer has a thickness of 1 to 10 μ

m.

27. The light emitting device according to claim 21, wherein the semiconductor structure comprises:

a p-type semiconductor layer on the first electrode;

an active layer on the p-type semiconductor layer; and

an n-type semiconductor layer on the active layer.

28. The light emitting device according to claim 21, wherein the semiconductor structure comprises a GaN-based semiconductor layer.

29. The light emitting device according to claim 21, wherein the support layer includes at least one of Cu, Ni and Au.

30. The light emitting device according to claim 21, wherein the conductive support structure has a thickness of 30 to 200 μ

m.

31. The light emitting device according to claim 21, wherein the ohmic electrode comprises transparent material.

32. The light emitting device according to claim 21, wherein the ohmic electrode comprises at least one of Ru, Ni, Au and ITO.

33. The light emitting device according to claim 21, wherein the ohmic electrode is multi-layer.

34. The light emitting device according to claim 21, wherein the reflective electrode comprises at least one of Ag and Al.

35. The light emitting device according to claim 21, wherein the bonding layer comprises at least one of Ti, Pt, Au, Ni and Al.

36. The light emitting device according to claim 21, wherein the first electrode and the metal layer have surfaces facing each other, and wherein the areas of the surfaces are substantially the same.

37. The light emitting device according to claim 21, wherein the first electrode contacts the metal layer.

38. The light emitting device according to claim 21, wherein the metal layer contacts the bonding layer.

39. The light emitting device according to claim 21, further comprising a passivation layer on the semiconductor structure.

40. The light emitting device according to claim 29, wherein the passivation layer is on the side surface of the semiconductor structure.

41. The light emitting device according to claim 29, wherein the passivation layer contacts the bonding layer.

42. The light emitting device according to claim 29, wherein the passivation layer contacts the metal layer.

43. The light emitting device according to claim 21, wherein the ohmic electrode is arranged directly on the semiconductor structure.

44. A light emitting device having a vertical structure, comprising:

a conductive support structure comprising a support layer;

a metal layer on the conductive support structure, wherein the ductility of the metal layer is higher than the ductility of the support layer;

a bonding layer on the metal layer;

a first electrode on the bonding layer, the first electrode comprising an ohmic electrode and a reflective electrode;

a semiconductor structure having multi-layers arranged directly on the ohmic electrode, the semiconductor structure having an inclined side surface, wherein the surface area of the first electrode facing the semiconductor structure is smaller than the surface area of the conductive support structure facing the bonding layer;

a passivation layer on the semiconductor structure; and

a second electrode on the semiconductor structure.