Thin-Film Semiconductor Component and Component Assembly

• US 20100163915A1
• Filed: 07/16/2007
• Published: 07/01/2010
• Est. Priority Date: 08/04/2006
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Herrmann, Siegfried
• Granted Patent: US 8,872,330 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 characterized by the shape
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Claims

1. A thin-film semiconductor component comprising:

a carrier layer;

a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation; and

a heat dissipating layer provided for cooling the thin-film semiconductor component and applied on the carrier layer.

2. The thin-film semiconductor component as claimed in claim 1, wherein the heat dissipating layer has a base area which is at least equal in size to the base area of the layer stack.

3. The thin-film semiconductor component as claimed in claim 1, wherein the heat dissipating layer has a thickness in the one- to two-digit micrometers range.

4. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer is a film.

5. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer contains a plastic material.

6. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer comprises a first partial layer and a second partial layer, and wherein the first partial layer is a layer applied to the second partial layer and the second partial layer is a film.

7. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer has a thickness of less than or equal to 100 μ

m.

8. The thin-film semiconductor component as claimed in claim 1, wherein a covering layer for covering the layer stack is arranged on a side of the layer stack opposite to the carrier layer.

9. The thin-film semiconductor component as claimed in claim 8, wherein the covering layer is a film.

10. The thin-film semiconductor component as claimed in claim 8, wherein the covering layer contains a transparent material.

11. The thin-film semiconductor component as claimed in claim 1, wherein the covering layer has an optical structure.

12. The thin-film semiconductor component as claimed in claim 11, wherein the covering layer is partly reflectively coated.

13. A component assembly comprising at least two thin-film semiconductor components as claimed in claim 1, wherein the thin-film semiconductor components have a common carrier layer.

14. The component assembly as claimed in claim 13, wherein a common contact pad for an electrical contact of the layer stacks on the coupling-out side is applied on the carrier layer between the layer stacks.

15. The component assembly as claimed in claim 13, wherein the thin-film semiconductor components are connected in series.