METHODS OF FORMING NICKEL SULFIDE FILM ON A SEMICONDUCTOR DEVICE
First Claim
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1. A method of forming a semiconductor device comprising:
- providing a substrate;
exposing a desired region of the substrate to a nickel-containing; and
exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region.
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Abstract
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
367 Citations
29 Claims
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1. A method of forming a semiconductor device comprising:
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providing a substrate; exposing a desired region of the substrate to a nickel-containing; and exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device comprising:
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providing a substrate; forming a semiconductor body on the substrate the semiconductor body having a top surface and sidewalls extending from the top surface of semiconductor body to the substrate; alternatingly exposing the semiconductor body to a nickel-containing precursor and a sulfur-containing precursor to conformally deposit a nickel sulfide film on the top surface and sidewalls of the semiconductor body. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor device, comprising:
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a substrate having a gate electrode formed thereon; a source region and a drain region formed on the substrate, wherein the source and drain regions are formed on opposite sides of the gate electrode; a first nickel sulfide layer formed on the source region; and a second nickel sulfide layer formed on the drain region. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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Specification