HIGH VOLTAGE (>100V) LATERAL TRENCH POWER MOSFET WITH LOW SPECIFIC-ON-RESISTANCE
First Claim
1. An apparatus comprising:
- a semiconductor substrate;
an epitaxial layer disposed on the semiconductor substrate and configured to provide a drift region;
a body portion contacting the drift region and configured to provide a channel for current flow when a bias signal is applied to a gate electrode;
a source region contacting the body portion;
a gate trench formed in the epitaxial layer;
the gate electrode formed at least partially in the gate trench and extending to a first depth in the gate trench;
a field plate formed at least partially in the gate trench and extending to a second depth, greater than the first depth, in the gate trench; and
a dielectric material comprising a first portion disposed in the gate trench between the gate electrode and the source region and a second portion disposed in the gate trench between the field plate and the epitaxial layer.
1 Assignment
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Accused Products
Abstract
In one aspect, a lateral MOS device is provided. The lateral MOS device includes a gate electrode disposed at least partially in a gate trench to apply a voltage to a channel region, and a drain electrode spaced from the gate electrode, and in electrical communication with a drift region having a boundary with a lower end of the channel region. The device includes a gate dielectric layer in contact with the gate electrode, and disposed between the gate electrode and the drain electrode. The channel region is adjacent to a substantially vertical wall of the gate trench. The device includes a field plate contacting the gate electrode and configured to increase a breakdown voltage of the device.
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Citations
14 Claims
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1. An apparatus comprising:
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a semiconductor substrate; an epitaxial layer disposed on the semiconductor substrate and configured to provide a drift region; a body portion contacting the drift region and configured to provide a channel for current flow when a bias signal is applied to a gate electrode; a source region contacting the body portion; a gate trench formed in the epitaxial layer; the gate electrode formed at least partially in the gate trench and extending to a first depth in the gate trench; a field plate formed at least partially in the gate trench and extending to a second depth, greater than the first depth, in the gate trench; and a dielectric material comprising a first portion disposed in the gate trench between the gate electrode and the source region and a second portion disposed in the gate trench between the field plate and the epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a lateral trench-based device, comprising:
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forming an epitaxial layer on a semiconductor substrate; forming a gate trench in the epitaxial layer; filling at least a portion of the gate trench with a dielectric material; forming a gate electrode in the dielectric material, the gate electrode extending to a first depth in the gate trench; and forming a field plate in the dielectric material, the field plate extending to a second depth, greater than the first depth, in the gate trench. - View Dependent Claims (12, 13, 14)
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Specification