SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate;
a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate;
an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate; and
an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component,wherein the supporting member comprises a depressed portion formed from the top surface of the supporting member.
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Accused Products
Abstract
This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
149 Citations
18 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate; a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate; an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate; and an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component, wherein the supporting member comprises a depressed portion formed from the top surface of the supporting member. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate; a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate; an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate; and an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component; wherein the supporting member has a first through-hole connecting the top and bottom surfaces of the supporting member and provided therein with a first conductive terminal electrically connected with the electrode and a second through-hole not provided with the first conductive terminal and configured to house all or a portion of another device. - View Dependent Claims (8)
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9. A stacked layer type semiconductor device comprising a plurality of semiconductor devices vertically stacked, comprising:
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a lower layer semiconductor device comprising a semiconductor substrate having an electronic component on a surface thereof and a supporting member bonded to the surface of the semiconductor substrate through an adhesive layer; and an upper layer semiconductor device disposed on the lower layer semiconductor device and comprising a semiconductor substrate having an electronic component on a surface thereof and a supporting member bonded to the surface of the semiconductor substrate of the upper layer semiconductor device through an adhesive layer, wherein the supporting member of the lower layer semiconductor device comprises a depressed portion or a through-hole formed from a top surface thereof, and all or a portion of the upper layer semiconductor device is housed in the depressed portion or the through-hole of the supporting member of the lower layer semiconductor device. - View Dependent Claims (10, 11, 12)
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13. A method of manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate comprising an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and formed on the surface of the semiconductor substrate; bonding a supporting member to the surface of the semiconductor substrate using an adhesive; and forming a depressed portion from a top surface of the supporting member. - View Dependent Claims (14, 15)
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16. A method of manufacturing a stacked layer type semiconductor device, comprising:
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providing a lower layer semiconductor device comprising a semiconductor substrate having an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and a supporting member bonded to the surface of the lower layer semiconductor substrate through an adhesive layer; placing on the lower layer semiconductor device an upper layer semiconductor device comprising a semiconductor substrate having an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and a supporting member bonded to the surface of the upper layer semiconductor substrate through an adhesive layer, wherein a depressed portion or a through-hole is formed from a top surface of the supporting member of the lower layer semiconductor device; and all or a portion of the upper layer semiconductor device is housed in the depressed portion or the through-hole in the supporting member of the lower layer semiconductor device. - View Dependent Claims (17, 18)
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Specification