INTEGRATING A BOTTOMLESS VIA TO PROMOTE ADSORPTION OF ANTISUPPRESSOR ON EXPOSED COPPER SURFACE AND ENHANCE ELECTROPLATING SUPERFILL ON NOBLE METALS

• US 20100164108A1
• Filed: 03/11/2010
• Published: 07/01/2010
• Est. Priority Date: 06/30/2006
• Status: Abandoned Application

• Current Assignee: Screenfx Studios, LP
• Original Assignee: Screenfx Studios, LP
• Inventors: Cheng, Chin-Chang, Johnston, Steven W.
• Application Number:
  US12/722,349
• Publication Number:
  US 20100164108A1
• Time in Patent Office: Days
• US Class Current: 257/751
• CPC Class Codes: C23C 18/1608 from pretreatment step, i.e. selective pre-treatment
• CPC Class Codes: C23C 18/165 Multilayered product layered product B32B
• CPC Class Codes: C23C 18/32 Coating with nickel, cobalt or mixtures thereof with phosphorus or boron C23C18/50 takes precedence
• CPC Class Codes: C25D 3/38 of copper
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.

Claims

1. An apparatus comprising:

a dielectric layer having an opening;

a barrier layer on the opening; and

a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy layer.

2. The apparatus of claim 1 wherein the seed layer further includes a reliability enhancing metal alloy species where the copper and the reliability enhancing metal alloy species having less than 50% weight of the noble metal-copper-reliability enhancing metal alloy.

3. An apparatus comprising:

a dielectric layer having an opening, the dielectric layer disposed on a copper interconnect of a substrate;

a barrier layer formed on the opening; and

a seed layer formed on the barrier layer, the seed layer having a noble metal or a noble metal-copper alloy, the bottom of the opening exposing copper from the copper interconnect.

4. The apparatus of claim 3 further comprising:

a copper or copper alloy layer formed on the seed layer and filling the opening using an electroplating or electroless bath, the exposed copper at the bottom of the opening functioning as a seed layer for the electroplating or electroless in the opening.