Backside Metal Treatment of Semiconductor Chips
First Claim
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1. An integrated circuit structure comprising:
- a semiconductor substrate comprising a front side and a backside;
a through-silicon via (TSV) penetrating the semiconductor substrate, the TSV comprising a back end extending to the backside of the semiconductor substrate;
a redistribution line (RDL) over the backside of the semiconductor substrate and connected to the back end of the TSV; and
a silicide layer over the RDL.
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Abstract
An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate. The TSV has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is over the backside of the semiconductor substrate and connected to the back end of the TSV. A silicide layer is over and contacting the RDL.
68 Citations
19 Claims
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1. An integrated circuit structure comprising:
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a semiconductor substrate comprising a front side and a backside; a through-silicon via (TSV) penetrating the semiconductor substrate, the TSV comprising a back end extending to the backside of the semiconductor substrate; a redistribution line (RDL) over the backside of the semiconductor substrate and connected to the back end of the TSV; and a silicide layer over the RDL. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit structure comprising:
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a semiconductor substrate comprising a front side and a backside; a through-silicon via (TSV) penetrating the semiconductor substrate, the TSV comprising a back end extending beyond the backside of the semiconductor substrate; a redistribution line (RDL) over the backside of the semiconductor substrate and connected to the back end of the TSV, wherein the RDL comprises copper; a silicide layer over and adjoining the RDL, wherein the silicide layer comprises copper silicide; a passivation layer over and adjoining the RDL; an opening in the passivation layer and the silicide layer, wherein a portion of the RDL is exposed through the opening; and a metal finish in the opening and contacting the RDL. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification