SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100165255A1
• Filed: 12/18/2009
• Published: 07/01/2010
• Est. Priority Date: 12/25/2008
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: NISHI, Takeshi, ISHITANI, Tetsuji, KUBOTA, Daisuke
• Application Number:
  US12/641,413
• Publication Number:
  US 20100165255A1
• Time in Patent Office: Days
• US Class Current: 349/69
• CPC Class Codes: G02F 1/1333 Constructional arrangements; Manufacturing methodsG02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133603 with LEDs
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/13775 Polymer-stabilized liquid crystal layers
• CPC Class Codes: G02F 1/13793 Blue phases
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365

Abstract

It is an object to provide a liquid crystal display device capable of displaying a moving image with high image quality by employing a time-division display system (also called a field-sequential system) with the use of a plurality of light-emitting diodes (hereinafter referred to as LEDs) as a backlight. Further, it is an object to provide a liquid crystal display device in which high image quality, full color display, or low power consumption is realized by adjustment of the peak luminance. After a liquid crystal layer is sealed between a pair of substrates, polymer stabilization treatment is performed with the use of UV irradiation from both above and below the pair of substrates at the same time, whereby the polymer included in the liquid crystal layer sandwiched between the pair of substrates is evenly distributed. Thus, a liquid crystal display device is manufactured.

Claims

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming, over a first light-transmitting substrate, a gate electrode, a light-blocking layer, and a thin film transistor including an oxide semiconductor layer between the gate electrode and the light-blocking layer;

forming a pixel portion including a pixel electrode which is electrically connected to the thin film transistor;

fixing the first light-transmitting substrate and a second light-transmitting substrate to each other with a liquid crystal layer including a photocurable resin and a photopolymerization initiator interposed therebetween;

irradiating the liquid crystal layer with ultraviolet light from both above and below the first light-transmitting substrate and the second light-transmitting substrate;

fixing a first polarizing plate to the first light-transmitting substrate and a second polarizing plate to the second light-transmitting substrate after irradiation of the liquid crystal layer with the ultraviolet light; and

fixing a backlight portion including plural kinds of light-emitting diodes so as to overlap with the pixel portion of the first light-transmitting substrate.

2. The manufacturing method of a semiconductor device according to claim 1, wherein the liquid crystal layer includes a liquid crystal material exhibiting a blue phase.

3. The manufacturing method of a semiconductor device according to claim 1, wherein the liquid crystal layer includes a chiral agent.

4. A manufacturing method of a semiconductor device, comprising the steps of:

forming, over a first light-transmitting substrate, a gate electrode and a thin film transistor including an oxide semiconductor layer which overlaps with the gate electrode;

forming a pixel portion including a pixel electrode which is electrically connected to the thin film transistor;

fixing a second light-transmitting substrate provided with a light-blocking layer to the first light-transmitting substrate with a liquid crystal layer including a photocurable resin and a photopolymerization initiator interposed therebetween;

irradiating the liquid crystal layer with ultraviolet light from both above and below the first light-transmitting substrate and the second light-transmitting substrate;

fixing a first polarizing plate to the first light-transmitting substrate and a second polarizing plate to the second light-transmitting substrate after irradiation of the liquid crystal layer with the ultraviolet light; and

fixing a backlight portion including plural kinds of light-emitting diodes so as to overlap with the pixel portion of the first light-transmitting substrate.

5. The manufacturing method of a semiconductor device according to claim 4, wherein the light-blocking layer overlaps with the oxide semiconductor layer.

6. The manufacturing method of a semiconductor device according to claim 4, wherein the liquid crystal layer includes a liquid crystal material exhibiting a blue phase.

7. The manufacturing method of a semiconductor device according to claim 4, wherein the liquid crystal layer includes a chiral agent.

8. A semiconductor device comprising:

a backlight portion;

a first light-transmitting substrate over the backlight portion;

a gate electrode, a light-blocking layer, and a thin film transistor including an oxide semiconductor layer between the gate electrode and the light-blocking layer, which are provided over the first light-transmitting substrate;

a second light-transmitting substrate fixed over the first light-transmitting substrate; and

a liquid crystal layer between the first light-transmitting substrate and the second light-transmitting substrate,

wherein the backlight portion includes plural kinds of light-emitting diodes, and

wherein light emitted from the light-emitting diodes passes through the first light-transmitting substrate and the second light-transmitting substrate.

9. The semiconductor device according to claim 8, further comprising a light-emitting diode control circuit.

10. The semiconductor device according to claim 8, wherein the liquid crystal layer includes a liquid crystal material exhibiting a blue phase.

11. The semiconductor device according to claim 8, wherein the liquid crystal layer includes a chiral agent.

12. The semiconductor device according to claim 8, wherein the liquid crystal layer includes a photocurable resin and a photopolymerization initiator.

13. A semiconductor device comprising:

a backlight portion;

a first light-transmitting substrate over the backlight portion;

a thin film transistor including an oxide semiconductor layer over the first light-transmitting substrate;

a second light-transmitting substrate fixed over the first light-transmitting substrate;

a light-blocking layer which overlaps with the oxide semiconductor layer, between the second light-transmitting substrate and the first light-transmitting substrate; and

a liquid crystal layer between the first light-transmitting substrate and the second light-transmitting substrate,

wherein the backlight portion includes plural kinds of light-emitting diodes, and

wherein light emitted from the light-emitting diodes passes through the first light-transmitting substrate and the second light-transmitting substrate.

14. The semiconductor device according to claim 13, further comprising a light-emitting diode control circuit.

15. The semiconductor device according to claim 13, wherein the liquid crystal layer includes a liquid crystal material exhibiting a blue phase.

16. The semiconductor device according to claim 13, wherein the liquid crystal layer includes a chiral agent.

17. The semiconductor device according to claim 13, wherein the liquid crystal layer includes a photocurable resin and a photopolymerization initiator.