EUV Mask Inspection

• US 20100165310A1
• Filed: 10/21/2009
• Published: 07/01/2010
• Est. Priority Date: 12/31/2008
• Status: Abandoned Application

• Current Assignee: ASML Holding NV, ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Holding NV
• Inventors: Scaccabarozzi, Luigi, SEWELL, Harry, Nihtianov, Stoyan
• Application Number:
  US12/582,825
• Publication Number:
  US 20100165310A1
• Time in Patent Office: Days
• US Class Current: 355/53
• CPC Class Codes: G01N 2021/95676 Masks, reticles, shadow masks
• CPC Class Codes: G03B 27/42 for automatic sequential copying of the same original G03B27/34, G03B27/53 take precedence
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

A system for inspecting an extreme ultra violet (EUV) mask. The system includes an array of sensors and an optical system. The array of sensors is configured to produce analog data corresponding to received optical energy. The optical system is configured to direct EUV light from an inspection area of an EUV patterning device onto the array of sensors, whereby the analog data is used to determine defects or to compensate for irregularities found on the EUV mask.

Claims

1. A system, comprising:

an array of sensors configured to produce analog data corresponding to received optical energy; and

an optical system configured to direct extreme ultra-violet (EUV) light from an inspection area of an EUV patterning device onto the array of sensors;

whereby the analog data is used to determine defects or to compensate for irregularities found on the EUV mask.

2. The system of claim 1, wherein the array of sensors comprises an array of charge coupled devices (CCDs).

3. The system of claim 2, wherein the CCD array comprises a two-dimensional CCD array.

4. The system of claim 1, wherein the array of sensors is configured to use time delay integration to process the analog data generated by each sensor in the array of sensors.

5. The system of claim 1, wherein the EUV light comprises light having a wavelength of less than about 50 nm.

6. The system of claim 1, wherein the EUV light comprises light having a wavelength of about 13.4 nm.

7. The system of claim 1, wherein the EUV light comprises light having a wavelength of about 11.2 nm.

8. The system of claim 1, wherein the array of sensors is configured to produce the analog data when the EUV light is equal to or less than about 1 photon per sensor of the array of sensors.

9. The system of claim 1, wherein the array of sensors is sized to correlate to a size of the inspection area of the EUV patterning device, whereby inspection throughput is increased based on receiving all illumination from the inspection area substantially simultaneously.

10. The system of claim 1, further comprising:

a support device configured to support the EUV mask when the EUV mask patterns another EUV beam of radiation; and

a projection system configured to project the patterned EUV beam onto a target portion of a substrate.

11. The system of claim 1, further comprising:

an analog-to-digital converter; and

a controller configured to control portions of a lithography system, the lithography system configured to use the EUV patterning device to pattern a substrate, based on the digital data.

12. An extreme ultra-violet (EUV) mask inspection system, comprising:

a plurality of photosensitive elements arranged in a one-dimensional array having a longitudinal axis, and formed on a substrate,

wherein each photosensitive element generates an electrical charge in response to illumination by a beam of EUV radiation that has been patterned by a scanning EUV mask, and

wherein each photosensitive element is electrically coupled to an adjacent photosensitive element such that accumulated electrical charge in each photosensitive element is switchably transferable to the adjacent photosensitive element in synchronicity with the scanning EUV mask; and

an analog-to-digital converter (ADC) coupled to one of the photosensitive elements disposed at an edge of the one-dimensional array.

13. The EUV mask inspection system of claim 12, wherein the plurality of photosensitive elements are illuminated from one of a backside of the substrate and a frontside of the substrate.

14. The EUV mask inspection system of claim 12, further including:

an actuator coupled to at least one of the EUV mask and the plurality of photosensitive elements.

15. An extreme ultra-violet (EUV) mask inspection method, comprising:

projecting a beam of EUV radiation onto a scanning EUV mask resulting in a patterned beam of EUV radiation;

projecting the patterned beam of radiation onto a EUV detector array, the EUV detector array comprising;

a plurality of photosensitive elements arranged in a one-dimensional array having a longitudinal axis, and formed on a substrate,

wherein each photosensitive element generates an electrical charge in response to illumination by the patterned beam of EUV radiation, and

wherein each photosensitive element is electrically coupled to an adjacent photosensitive element such that accumulated electrical charge in each photosensitive element is switchably transferable to the adjacent photosensitive element in synchronicity with the scanning EUV mask; and

an analog-to-digital converter (ADC) coupled to one of the photosensitive elements disposed at an edge of the one-dimensional array; and

outputting an output signal from the ADC.

16. The method of claim 15, wherein the plurality of photosensitive elements are illuminated from one of a backside of the substrate and a frontside of the substrate.

17. The method of claim 15, wherein an actuator coupled to at least one of the scanning EUV mask and the plurality of photosensitive elements provides relative motion between the scanning EUV mask and the EUV detector array.

18. The method of claim 15, further comprising:

comparing the output signal with a reference output signal stored in memory, wherein the reference output signal is associated with a reference mask feature and the output signal is associated with a mask feature of the scanning EUV mask that is nominally identical to the reference mask feature; and

determining a defect or irregularity of the scanning EUV mask based on the comparing.

19. The method of claim 15, further comprising:

comparing the output signal with a simulated signal stored in a database; and

determining a defect or irregularity of the scanning EUV mask based on the comparing.

20. The method of claim 15, further comprising:

comparing the output signal with a reference output signal, wherein the reference output signal is associated with a reference mask feature having a first coordinate position on the scanning EUV mask and the output signal is associated with a mask feature that is nominally identical to the reference mask feature and having a second coordinate position on the scanning EUV mask; and

determining a defect or irregularity of the scanning EUV mask based on the comparing.