METHOD FOR FORMING FINE PATTERNS IN A SEMICONDUCTOR DEVICE
First Claim
1. A method for forming fine patterns in a semiconductor device, the method comprising:
- forming a hard mask layer over an etch target layer;
forming a plurality of first patterns with a predetermined width and space over the hard mask layer;
reducing size of the first patterns;
forming first spacers on side walls of the first patterns and removing the first patterns;
patterning the hard mask layer using the first spacers as mask to form a hard mask patterns and removing the first spacers;
oxidating surfaces of the hard mask patterns;
removing the oxidated portion over the surfaces of the hard mask patterns;
forming second spacers on side walls of the hard mask patterns and removing the hard mask patterns; and
,patterning the etch target layer using the second spacers as mask.
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Abstract
A method for forming fine patterns in a semiconductor device includes forming a first mask layer over an etch target layer, forming a first pattern over the first mask layer, reducing a size of the first pattern, forming a first spacer on a side face of the first pattern, removing the first pattern and patterning the first mask layer using the first spacer as a mask and removing the first spacer. The method also includes oxidating a surface of the patterned first mask layer, forming the first mask layer with reduced size by removing the oxidated portion over the surface of the first mask layer, forming a second spacer on a side wall of the first mask layer and removing the first mask layer, and patterning the etch target layer using the second spacer as a mask.
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Citations
10 Claims
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1. A method for forming fine patterns in a semiconductor device, the method comprising:
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forming a hard mask layer over an etch target layer; forming a plurality of first patterns with a predetermined width and space over the hard mask layer; reducing size of the first patterns; forming first spacers on side walls of the first patterns and removing the first patterns; patterning the hard mask layer using the first spacers as mask to form a hard mask patterns and removing the first spacers; oxidating surfaces of the hard mask patterns; removing the oxidated portion over the surfaces of the hard mask patterns; forming second spacers on side walls of the hard mask patterns and removing the hard mask patterns; and
,patterning the etch target layer using the second spacers as mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification