METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP

• US 20100167434A1
• Filed: 03/04/2009
• Published: 07/01/2010
• Est. Priority Date: 12/26/2008
• Status: Active Grant

• Current Assignee: Lextar Electronics Corporation
• Original Assignee: Lextar Electronics Corporation
• Inventors: Fang, Kuo-Lung, Chao, Chih-Wei, Weng, Chien-Sen
• Granted Patent: US 8,043,873 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Claims

1. A method of fabricating a light emitting diode chip, comprising:

forming a semiconductor device layer on a substrate;

forming a current spreading layer on a portion of the semiconductor device layer;

forming a current blocking layer and a passivation layer on a portion of the semiconductor device layer not covered by the current spreading layer;

forming a first electrode on the current blocking layer and the current spreading layer; and

forming a second electrode on the semiconductor device layer.

2. The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the semiconductor device layer comprises:

forming a semiconductor layer on the substrate; and

patterning the semiconductor layer to form the semiconductor device layer.

3. The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the semiconductor device layer comprises:

forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and

patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

4. The method of fabricating the light emitting diode chip as claimed in claim 3, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer; and

patterning the conductive layer to form the current spreading layer.

5. The method of fabricating the light emitting diode chip as claimed in claim 4, wherein the current spreading layer has an opening to expose an upper surface of the second type semiconductor layer, and the current blocking layer contacts with the upper surface of the second type semiconductor layer through the opening.

6. The method of fabricating the light emitting diode chip as claimed in claim 5, wherein a contact area of the current blocking layer and the second type semiconductor layer substantially equals to a bottom area of the opening.

7. The method of fabricating the light emitting diode chip as claimed in claim 5, wherein the contact area of the current blocking layer and the second type semiconductor layer is substantially smaller than the bottom area of the opening.

8. The method of fabricating the light emitting diode chip as claimed as claim 7, wherein a portion of the second type semiconductor layer exposed by the opening but not covered by the current blocking layer, is electrically connected to the first electrode.

9. The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the current blocking layer and the passivation layer comprises:

forming a dielectric layer on a portion of the semiconductor device layer not covered by the current spreading layer; and

patterning the dielectric layer to form the current blocking layer and the passivation layer simultaneously.

10. The method of fabricating the light emitting diode chip as claimed in claim 9, wherein a material of the dielectric layer comprises a silicon carbide based material.

11. The method of fabricating the light emitting diode chip as claimed in claim 10, wherein the silicon carbide based material comprises SiO_xC_y:

H, SiC, SiC_xN_y, or SiO_xC_yN_z.

12. The method of fabricating the light emitting diode chip as claimed in claim 9, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.

13. A method of fabricating a light emitting diode chip, comprising:

forming a semiconductor device layer on a substrate;

forming a current blocking layer and a passivation layer on a portion of the semiconductor device layer;

removing a portion of the semiconductor device layer not covered by the current blocking layer and the passivation layer to form a plurality of identification recesses on the semiconductor device layer;

forming a current spreading layer on the current blocking layer and a portion of the semiconductor device layer;

forming a first electrode on the current spreading layer; and

forming a second electrode on the semiconductor device layer.

14. The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the semiconductor device layer comprises:

forming a semiconductor layer on the substrate; and

patterning the semiconductor layer to form the semiconductor device layer.

15. The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the semiconductor device layer comprises:

forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and

patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

16. The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the current blocking layer and the passivation layer comprises:

forming a dielectric layer on the semiconductor device layer; and

patterning the dielectric layer to form the current blocking layer and the passivation layer simultaneously.

17. The method of fabricating the light emitting diode chip as claimed in claim 16, wherein a material of the dielectric layer comprises a silicon carbide based material.

18. The method of fabricating the light emitting diode chip as claimed in claim 17, wherein the silicon carbide based material comprises SiO_xC_y:

H, SiC, SiC_xN_y, or SiO_xC_yN_z.

19. The method of fabricating the light emitting diode chip as claimed in claim 16, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.

20. The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the plurality of identification recesses comprises etching.

21. The method of fabricating the light emitting diode chip as claimed in claim 15, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer and the current blocking layer; and

patterning the conductive layer to form the current spreading layer.

22. The method of fabricating the light emitting diode chip as claimed in claim 21, wherein the current spreading layer has an opening to expose an upper surface of the current blocking layer, and the first electrode contacts with the upper surface of the current blocking layer through the opening.

23. A method of fabricating a light emitting diode chip, comprising:

forming a semiconductor device layer on a substrate;

forming a patterned functional layer with multi-layer structure simultaneously on a portion of the semiconductor device layer;

forming a current spreading layer on a portion of the patterned functional layer and a portion of the semiconductor device layer;

forming a first electrode on the current spreading layer; and

forming a second electrode on the semiconductor device layer.

24. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the semiconductor device layer comprises:

forming a semiconductor layer on the substrate; and

patterning the semiconductor layer to form the semiconductor device layer.

25. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the semiconductor device layer comprises:

forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and

patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

26. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:

forming a first dielectric layer on the semiconductor device layer;

forming an alignment identification layer on the first dielectric layer; and

patterning the first dielectric layer and the alignment identification layer to form a current blocking layer and a passivation layer simultaneously.

27. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:

forming a first dielectric layer on the semiconductor device layer;

forming an alignment identification layer on the first dielectric layer; and

patterning the first dielectric layer and the alignment identification layer to simultaneously form a current blocking layer, a passivation layer, and an isolating trench disposed within the passivation layer.

28. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:

forming a first dielectric layer on the semiconductor device layer;

forming an alignment identification layer on the first dielectric layer;

forming a second dielectric layer on the alignment identification layer; and

patterning the first dielectric layer, the alignment identification layer, and the second dielectric layer to form a current blocking layer and a passivation layer simultaneously.

29. The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:

forming a first dielectric layer on the semiconductor device layer;

forming an alignment identification layer on the first dielectric layer;

forming a second dielectric layer on the alignment identification layer; and

patterning the first dielectric layer, the alignment identification layer, and the second dielectric layer to simultaneously form a current blocking layer, a passivation layer, and an isolating trench disposed within the passivation layer.

30. The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

31. The method of fabricating the light emitting diode chip as claimed in claim 30, wherein the silicon carbide based material comprises SiO_xC_y:

H, SiC, SiC_xN_y, or SiO_xC_yN_z.

32. The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

33. The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

34. The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

35. The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

36. The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

37. The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

38. The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

39. The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the alignment identification layer comprises a metal.

40. The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the alignment identification layer comprises a metal.

41. The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the alignment identification layer comprises a metal.

42. The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the alignment identification layer comprises a metal.

43. The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer and the current blocking layer; and

patterning the conductive layer to form the current spreading layer.

44. The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer and the current blocking layer; and

patterning the conductive layer to form the current spreading layer.

45. The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer and the current blocking layer; and

patterning the conductive layer to form the current spreading layer.

46. The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein the method of forming the current spreading layer comprises:

forming a conductive layer on the second type semiconductor layer and the current blocking layer; and

patterning the conductive layer to form the current spreading layer.

47. The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

48. The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

49. The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

50. The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.