METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
First Claim
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1. A method for producing two or more semiconductor structures using a single donor wafer, the method comprising the steps of:
- providing a donor wafer comprising a support substrate, and a hetero-epitaxial layer comprising a buffer layer having a mesh parameter that is different from that of the support substrate,treating the donor wafer by removing at least part of the hetero-epitaxial layer without removing the buffer layer to form a treated donor wafer having a surface that is sufficiently smooth for growth of at least one epitaxial layer thereon;
growing at least one epitaxial layer of semiconductor material on the hetero-epitaxial layer of the donor wafer;
transferring a portion of the at least one epitaxial layer to a receiver wafer to form a first semiconductor structure which comprises the receiver wafer and a semiconductor layer of the at least one epitaxial layer portion on the receiver wafer and a second semiconductor structure which comprises the support substrate, the buffer layer and the remaining, non-transferred portion of the epitaxial layer;
treating the second semiconductor structure by removing at least part of the remaining, non-transferred portion of the epitaxial layer without removing the buffer layer to form a treated semiconductor structure having a surface that is sufficiently smooth for growth of at least one further epitaxial layer thereon;
growing a further epitaxial layer on the treated semiconductor structure; and
recycling the treated semiconductor structure for transfer of a portion of the further epitaxial layer;
wherein the treating of the second semiconductor structure is conducted under the same conditions as the treating of the donor wafer to facilitate processing by not having to use different conditions.
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Abstract
A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
36 Citations
20 Claims
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1. A method for producing two or more semiconductor structures using a single donor wafer, the method comprising the steps of:
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providing a donor wafer comprising a support substrate, and a hetero-epitaxial layer comprising a buffer layer having a mesh parameter that is different from that of the support substrate, treating the donor wafer by removing at least part of the hetero-epitaxial layer without removing the buffer layer to form a treated donor wafer having a surface that is sufficiently smooth for growth of at least one epitaxial layer thereon; growing at least one epitaxial layer of semiconductor material on the hetero-epitaxial layer of the donor wafer; transferring a portion of the at least one epitaxial layer to a receiver wafer to form a first semiconductor structure which comprises the receiver wafer and a semiconductor layer of the at least one epitaxial layer portion on the receiver wafer and a second semiconductor structure which comprises the support substrate, the buffer layer and the remaining, non-transferred portion of the epitaxial layer; treating the second semiconductor structure by removing at least part of the remaining, non-transferred portion of the epitaxial layer without removing the buffer layer to form a treated semiconductor structure having a surface that is sufficiently smooth for growth of at least one further epitaxial layer thereon; growing a further epitaxial layer on the treated semiconductor structure; and recycling the treated semiconductor structure for transfer of a portion of the further epitaxial layer; wherein the treating of the second semiconductor structure is conducted under the same conditions as the treating of the donor wafer to facilitate processing by not having to use different conditions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for producing two or more semiconductor structures using a single donor wafer, the method comprising the steps of:
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providing a donor wafer comprising a support substrate, and a hetero-epitaxial layer, comprising a buffer layer having a mesh parameter that is different from that of the support substrate, and at least one epitaxial layer of semiconductor material on the buffer layer; wherein the thickness of one epitaxial layer is sufficient to provide at least two portions for transfer; transferring a portion of the at least one epitaxial layer to a receiver wafer to form a first semiconductor structure which comprises the receiver wafer and a semiconductor layer of the at least one epitaxial layer portion on the receiver wafer and second semiconductor structure which comprises the support substrate, the buffer layer and the remaining, non-transferred portion of the epitaxial layer, wherein the non-transferred portion has a thickness sufficient to provide at least a second transfer portion; treating the second semiconductor structure by removing at least part of the remaining, non-transferred portion of the same epitaxial layer without removing the buffer layer to form a treated semiconductor structure having a surface that is sufficiently smooth for growth of at least one further epitaxial layer thereon; and recycling the treated semiconductor structure for transfer of at least a second portion of the same epitaxial layer.
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Specification