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INDUCTIVE PLASMA DOPING

  • US 20100167506A1
  • Filed: 12/31/2008
  • Published: 07/01/2010
  • Est. Priority Date: 12/31/2008
  • Status: Abandoned Application
First Claim
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1. A method of doping a semiconductor wafer disposed on a pedestal electrode in an inductive plasma chamber, comprising:

  • generating a plasma in the inductive plasma chamber, the plasma having a first voltage with respect to ground; and

    applying a positive radio frequency (RF) voltage with respect to ground to the pedestal electrode in the inductive plasma chamber, the positive RF voltage based on the first voltage of the plasma.

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