INDUCTIVE PLASMA DOPING

• US 20100167506A1
• Filed: 12/31/2008
• Published: 07/01/2010
• Est. Priority Date: 12/31/2008
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LIN, Simon Su-Horng, Lin, Chin-Hsiang, Chern, Chyi Shyuan, Yang, Chi-Ming
• Application Number:
  US12/347,483
• Publication Number:
  US 20100167506A1
• Time in Patent Office: Days
• US Class Current: 438/513
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

In some embodiments, a method of doping a semiconductor wafer disposed on a pedestal electrode in an inductive plasma chamber includes generating a plasma having a first voltage with respect to ground in the inductive plasma chamber, and applying a radio frequency (RF) voltage with respect to ground to the pedestal electrode in the inductive plasma chamber. The positive RF voltage is based on the first voltage of the plasma.

Claims

1. A method of doping a semiconductor wafer disposed on a pedestal electrode in an inductive plasma chamber, comprising:

generating a plasma in the inductive plasma chamber, the plasma having a first voltage with respect to ground; and

applying a positive radio frequency (RF) voltage with respect to ground to the pedestal electrode in the inductive plasma chamber, the positive RF voltage based on the first voltage of the plasma.

2. The method of claim 1, further comprising:

adjusting the RF voltage applied to the electrode based on the potential of the plasma.

3. The method of claim 1, wherein the RF voltage is between approximately 0 volts and approximately 100 volts with respect to ground.

4. The method of claim 1, wherein the RF voltage is between approximately 45 volts and 55 volts with respect to ground.

5. The method of claim 1, wherein a high-k material is disposed on a surface of the semiconductor wafer, and the plasma includes nitrogen.

6. The method of claim 5, wherein the high-k material is selected from the group consisting of HfO₂, HfZrO, HfSiO, Al₂O₃, and La₂O₃.

7. The method of claim 1, wherein the semiconductor wafer includes a channel of a FINFET disposed on a surface, and the plasma includes an ion of a Group V element.

8. A method for doping a semiconductor wafer disposed on a pedestal electrode in an inductive plasma chamber, comprising:

generating a plasma in the inductive plasma chamber, the plasma having a first voltage with respect to ground;

biasing the pedestal electrode in the inductive plasma chamber at a second voltage with respect to ground; and

adjusting the second voltage to control the depth of a dopant in an upper surface of the semiconductor wafer,

wherein the second voltage is a radio frequency (RF) voltage and is adjusted based on the first voltage of the plasma.

9. The method of claim 8, wherein the second voltage is between approximately −

100 volts and approximately 100 volts with respect to ground.

10. The method of claim 8, wherein the second voltage is between approximately 45 volts and 55 volts with respect to ground.

11. The method of claim 8, wherein a high-k material is disposed on the upper surface of the semiconductor wafer, and the plasma includes nitrogen.

12. The method of claim 8, wherein the semiconductor substrate includes a channel of a FINFET disposed on a surface, and the plasma includes an ion of a Group V element.

13. The method of claim 11, wherein the high-k material is selected from the group consisting of HfO₂, HfZrO, HfSiO, Al₂O₃, and La₂O₃.

14. The method of claim 8, wherein the second voltage is positive with respect to ground.

15. A computer readable storage medium encoded with program code, wherein when the program code is executed by a processor, the processor performs a method, the method comprising:

setting a bias voltage of a pedestal electrode in an inductive plasma chamber at a second voltage with respect to ground, wherein the inductive plasma chamber has a plasma with a first voltage, and a semiconductor wafer is disposed on the pedestal electrode in the inductive plasma chamber; and

adjusting the bias voltage to control the depth of a dopant in an upper surface of the semiconductor wafer,

wherein the bias voltage is a radio frequency (RF) voltage and is adjusted based on the first voltage of the plasma.

16. The computer readable storage medium of claim 15, wherein the bias voltage is between approximately −

100 volts and approximately 100 volts with respect to ground.

17. The computer readable storage medium of claim 15, wherein the RF voltage is between approximately 45 volts and 55 volts with respect to ground.

18. The computer readable storage medium of claim 15, wherein a high-k material is disposed on the upper surface of the semiconductor wafer, and the plasma includes nitrogen.

19. The computer readable storage medium of claim 15, wherein the semiconductor substrate includes a channel of a FINFET disposed on a surface, and the plasma includes an ion of a Group V element.

20. The computer readable storage medium of claim 15, wherein the bias voltage is positive with respect to ground.