SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A manufacturing method of a semiconductor device comprising the steps of:
- forming a trench in the main surface of a semiconductor substrate;
forming a conductive layer on said main surface so as to fill said trench;
forming a potential fixing electrode filling said trench and having an expanding part expanding on said main surface so that a width thereof is larger than that of said trench, and forming a gate electrode on said main surface by patterning said conductive layer;
forming insulation layers so as to cover said gate electrode and expose said expanding part of said potential fixing electrode; and
forming main electrodes so as to be electrically insulated from said gate electrode and connected to a whole upper surface of said expanding part of said potential fixing electrode.
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Accused Products
Abstract
A semiconductor substrate has a trench in a first main surface. An insulated gate field effect part includes a gate electrode formed in the first main surface. A potential fixing electrode fills the trench and has an expanding part expanding on the first main surface so that a width thereof is larger than the width of the trench. An emitter electrode is formed on the first main surface and insulated from the gate electrode electrically and connected to a whole upper surface of the expanding part of the potential fixing electrode. Thus, a semiconductor device capable of enhancing reliability in order to prevent an aluminum spike from generating and a manufacturing method thereof can be provided.
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Citations
3 Claims
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1. A manufacturing method of a semiconductor device comprising the steps of:
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forming a trench in the main surface of a semiconductor substrate; forming a conductive layer on said main surface so as to fill said trench; forming a potential fixing electrode filling said trench and having an expanding part expanding on said main surface so that a width thereof is larger than that of said trench, and forming a gate electrode on said main surface by patterning said conductive layer; forming insulation layers so as to cover said gate electrode and expose said expanding part of said potential fixing electrode; and forming main electrodes so as to be electrically insulated from said gate electrode and connected to a whole upper surface of said expanding part of said potential fixing electrode. - View Dependent Claims (2, 3)
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Specification