WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES
First Claim
1. A wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substrate;
- wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
wherein each photoconductor unit comprises a first electrode having a first longitudinal direction and a first sidewall lying in a first plane parallel with the first longitudinal direction and a second electrode having a second longitudinal direction and a second sidewall lying in a second plane parallel with said second longitudinal direction;
wherein the first photoconductor unit comprises a plurality of first type elongate nanostructures positioned in between the first electrode and the second electrode of the first photoconductor unit, the elongate nanostructures each having a longitudinal axis, wherein the longitudinal axes of the first type elongate nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the first photoconductor unit; and
wherein the second photoconductor unit comprises a plurality of second type elongate nanostructures positioned in between the first electrode and the second electrode of the second photoconductor unit, the elongate nanostructures each having a longitudinal axis, wherein the longitudinal axes of the second type elongate nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the second photoconductor unit, wherein the first type elongate nanostructures are different from the second type elongate nanostructures.
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Abstract
A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.
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Citations
27 Claims
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1. A wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substrate;
- wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
wherein each photoconductor unit comprises a first electrode having a first longitudinal direction and a first sidewall lying in a first plane parallel with the first longitudinal direction and a second electrode having a second longitudinal direction and a second sidewall lying in a second plane parallel with said second longitudinal direction;
wherein the first photoconductor unit comprises a plurality of first type elongate nanostructures positioned in between the first electrode and the second electrode of the first photoconductor unit, the elongate nanostructures each having a longitudinal axis, wherein the longitudinal axes of the first type elongate nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the first photoconductor unit; and
wherein the second photoconductor unit comprises a plurality of second type elongate nanostructures positioned in between the first electrode and the second electrode of the second photoconductor unit, the elongate nanostructures each having a longitudinal axis, wherein the longitudinal axes of the second type elongate nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the second photoconductor unit, wherein the first type elongate nanostructures are different from the second type elongate nanostructures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
- wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
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21. A method for manufacturing a wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substantially planar substrate, the method comprising:
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providing a first photoconductor unit and a second photoconductor unit on a substrate, wherein providing a photoconductor unit comprises; providing a first electrode having a first longitudinal direction and having a sidewall lying in a first plane parallel with said first longitudinal direction; providing a second electrode having a second longitudinal direction and having a sidewall lying in a second plane parallel to the second longitudinal direction, wherein the first plane and the second plane are substantially parallel to each other and are substantially perpendicular to a plane of the substrate; and providing a plurality of elongate nanostructures, each having a first end and a second end, wherein the first ends of the elongate nanostructures are attached to the sidewall of the first electrode, and wherein the second ends of the elongate nanostructures are attached to the sidewall of the second electrode, wherein each elongate nanostructure has a longitudinal axis, wherein the longitudinal axes of the elongate nanostructures are substantially parallel to each other and are substantially perpendicular to the first plane and the second plane; wherein providing the first and second photoconductor units comprises providing a first photoconductor unit with a first type of elongate nanostructures and a second photoconductor unit with a second type of elongate nanostructures, wherein the first type of elongate nanostructures are different from the second type of elongate nano structures. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification