SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE

• US 20100171117A1
• Filed: 03/23/2010
• Published: 07/08/2010
• Est. Priority Date: 01/21/2005
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAMOTO, Hiroko, KUWABARA, Hideaki
• Application Number:
  US12/729,298
• Publication Number:
  US 20100171117A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

Claims

1. A semiconductor device comprising:

a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including a metal oxide wherein the metal includes indium; and

an antenna electrically connected to the thin film integrated circuit.

2. The semiconductor device according to claim 1, wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.

3. The semiconductor device according to claim 1, wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor.

4. The semiconductor device according to claim 1, further comprising a first cover material and a second cover material,

wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.

5. The semiconductor device according to claim 4, further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive.

6. The semiconductor device according to claim 1, further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,

wherein the thin film transistor is interposed between the insulating film and the antenna.

7. The semiconductor device according to claim 1, wherein the gate insulating film includes an oxide containing aluminum.

8. The semiconductor device according to claim 1, wherein the gate insulating film includes an oxide containing titanium.

9. The semiconductor device according to claim 1, wherein the antenna is formed from a solvent including a conductor by droplet discharging method.

10. A semiconductor device comprising:

a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including an In—

Ga—

Zn—

O; and

an antenna electrically connected to the thin integrated circuit.

11. The semiconductor device according to claim 10, wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.

12. The semiconductor device according to claim 10, wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor.

13. The semiconductor device according to claim 10, further comprising a first cover material and a second cover material,

wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.

14. The semiconductor device according to claim 13, further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive.

15. The semiconductor device according to claim 10, further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,

wherein the thin film transistor is interposed between the insulating film and the antenna.

16. The semiconductor device according to claim 10, wherein the gate insulating film includes an oxide containing aluminum.

17. The semiconductor device according to claim 10, wherein the gate insulating film includes an oxide containing titanium.

18. The semiconductor device according to claim 10, wherein the antenna is formed from a solvent including a conductor by droplet discharging method.

19. A semiconductor device comprising:

a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including a metal oxide wherein the metal includes indium;

an interlayer insulating film formed over the thin film transistor; and

an antenna over the interlayer insulating film, the antenna being electrically connected to the thin film integrated circuit.

20. The semiconductor device according to claim 19, wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.

21. The semiconductor device according to claim 19, wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor.

22. The semiconductor device according to claim 19, further comprising a first cover material and a second cover material,

wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.

23. The semiconductor device according to claim 22, further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive.

24. The semiconductor device according to claim 19, further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,

wherein the thin film transistor is interposed between the insulating film and the antenna.

25. The semiconductor device according to claim 19, wherein the gate insulating film includes an oxide containing aluminum.

26. The semiconductor device according to claim 19, wherein the gate insulating film includes an oxide containing titanium.

27. The semiconductor device according to claim 19, wherein the antenna is formed from a solvent including a conductor by droplet discharging method.

28. A semiconductor device comprising:

a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including an In—

Ga—

Zn—

O;

an interlayer insulating film formed over the thin film transistor; and

an antenna over the interlayer insulating film, the antenna being electrically connected to the thin film integrated circuit.

29. The semiconductor device according to claim 28, wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor.

30. The semiconductor device according to claim 28, wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor.

31. The semiconductor device according to claim 28, further comprising a first cover material and a second cover material,

wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.

32. The semiconductor device according to claim 31, further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive.

33. The semiconductor device according to claim 28, further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,

wherein the thin film transistor is interposed between the insulating film and the antenna.

34. The semiconductor device according to claim 28, wherein the gate insulating film includes an oxide containing aluminum.

35. The semiconductor device according to claim 28, wherein the gate insulating film includes an oxide containing titanium.

36. The semiconductor device according to claim 28, wherein the antenna is formed from a solvent including a conductor by droplet discharging method.