SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially laminated, the semiconductor light emitting device comprising:
- a first electrode layer formed between the conductive substrate and the first conductivity type semiconductor layer; and
a second electrode part including at least one electrode pad unit extending from the first electrode layer to the surface of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer,at least one electrode extending unit extending unit extending from the first electrode layer to the inside of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer, andan electrode connecting unit formed on the same layer as the first electrode layer, electrically separated from the first electrode layer, and connecting the electrode pad unit and the electrode extending unit.
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Accused Products
Abstract
There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
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Citations
19 Claims
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1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially laminated, the semiconductor light emitting device comprising:
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a first electrode layer formed between the conductive substrate and the first conductivity type semiconductor layer; and a second electrode part including at least one electrode pad unit extending from the first electrode layer to the surface of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer, at least one electrode extending unit extending unit extending from the first electrode layer to the inside of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer, and an electrode connecting unit formed on the same layer as the first electrode layer, electrically separated from the first electrode layer, and connecting the electrode pad unit and the electrode extending unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification