METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED PRESSURE SENSOR USING IC FOUNDRY-COMPATIBLE PROCESSES
First Claim
1. A pressure sensing device comprising:
- a substrate having a surface region;
a CMOS integrated circuit device layer overlying the surface region of the substrate;
a diaphragm device having one or more surface regions overlying the CMOS integrated circuit device layer; and
at least one or more spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the folded spring devices being operably coupled to the one or more surface regions of the diaphragm device.
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Abstract
A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.
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Citations
23 Claims
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1. A pressure sensing device comprising:
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a substrate having a surface region; a CMOS integrated circuit device layer overlying the surface region of the substrate; a diaphragm device having one or more surface regions overlying the CMOS integrated circuit device layer; and at least one or more spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the folded spring devices being operably coupled to the one or more surface regions of the diaphragm device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A pressure sensing device comprising:
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a substrate having a surface region; a CMOS integrated circuit device layer overlying the surface region of the substrate; a diaphragm device having at least a first surface region facing the CMOS integrated circuit device layer and a second surface region opposite the first surface region; at least one or more spring devices spatially disposed within a vicinity of the first surface region of the diaphragm device, each of the folded spring devices being operably coupled to the first surface region of the diaphragm device; two or more electrode devices operably coupled to the first surface region; at least one fluid channel formed between the two or more electrode devices, at least one of the fluid channels being in communication with the first surface region of the diaphragm device; and a housing member provided overlying the diaphragm device to form a cavity region between the housing member and the diaphragm device, the housing member comprising one or more first fluid openings to allow fluid to move between the cavity and a first region outside of the housing member, the one or more fluid openings being in communication with the second surface region of the diaphragm.
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16. A pressure sensing device comprising:
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a substrate having a surface region and a bulk region; a CMOS integrated circuit device layer overlying the surface region of the substrate; a diaphragm device having a first surface region facing and overlying the CMOS integrated circuit device layer and a second surface region opposite the first surface region; at least one or more spring devices spatially disposed within a vicinity of the first surface region of the diaphragm device, each of the folded spring devices being operably coupled to the first surface region of the diaphragm device; two or more electrode devices operably coupled to the first surface region; a first cavity region provided between the first surface region and the CMOS integrated circuit device layer, the first cavity region being substantially sealed and maintains a predetermined environment; and a housing member provided overlying the second surface region of the diaphragm device to form a second cavity region between the housing member and the diaphragm device, the housing member comprising one or more fluid openings to allow fluid to move between the second cavity and a region outside of the housing member.
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17. A pressure sensing device comprising:
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a substrate having a surface region and a bulk region; a CMOS integrated circuit device layer overlying the surface region of the substrate; a diaphragm device having one or more surface regions overlying the CMOS integrated circuit device layer, the diaphragm device being formed from a portion of a single crystal silicon material; and two or more electrode devices operably coupled to each of the one or more surface regions. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of forming an integrated MEMS sensor and circuit device, the method comprising:
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providing a first semiconductor substrate having, a first surface region, one or more piezoresistor regions, and a cleave region provided between the first surface region and a bulk portion of the first semiconductor substrate; joining the first surface region to a second surface region of a second semiconductor substrate, the second semiconductor substrate having a CMOS integrated circuit layer, a dielectric layer overlying the CMOS integrated circuit layer, and a cavity region provided within the dielectric layer; and releasing the bulk portion of the first semiconductor substrate while maintaining the first surface region attached to the second surface region.
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Specification