Semiconductor Device and Method of Forming an Inductor on Polymer Matrix Composite Substrate
First Claim
1. A method of making a semiconductor device, comprising:
- forming a polymer matrix composite substrate;
forming a first insulating layer over a first surface of the polymer matrix composite substrate;
forming a first conductive layer over the first insulating layer;
forming a second insulating layer over the first insulating layer and first conductive layer;
forming a second conductive layer over the second insulating layer and first conductive layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
removing a portion of the third insulating layer to expose the second conductive layer; and
forming a bump over the second conductive layer.
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Abstract
A semiconductor device has a first insulating layer formed over a first surface of a polymer matrix composite substrate. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. The second conductive layer is wound to exhibit inductive properties. A third conductive layer is formed between the first conductive layer and second conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. A fourth insulating layer can be formed over a second surface of the polymer matrix composite substrate. Alternatively, the fourth insulating layer can be formed over the first insulating layer prior to forming the first conductive layer.
75 Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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forming a polymer matrix composite substrate; forming a first insulating layer over a first surface of the polymer matrix composite substrate; forming a first conductive layer over the first insulating layer; forming a second insulating layer over the first insulating layer and first conductive layer; forming a second conductive layer over the second insulating layer and first conductive layer; forming a third insulating layer over the second insulating layer and second conductive layer; removing a portion of the third insulating layer to expose the second conductive layer; and forming a bump over the second conductive layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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forming a molded substrate; forming a first conductive layer over the molded substrate; forming a first insulating layer over the molded substrate and first conductive layer; forming a second conductive layer over the first insulating layer and first conductive layer; forming a second insulating layer over the first insulating layer and second conductive layer; and forming an interconnect structure over the second conductive layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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forming a polymer matrix composite substrate; forming an inductor over the polymer matrix composite substrate; and forming an interconnect structure over the inductor. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a polymer matrix composite substrate; a first conductive layer formed over the polymer matrix composite substrate; a first insulating layer formed over the polymer matrix composite substrate and first conductive layer; a second conductive layer formed over the first insulating layer and first conductive layer; a second insulating layer formed over the first insulating layer and second conductive layer; and an interconnect structure formed over the second conductive layer. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification