Robust TSV structure

• US 20100171203A1
• Filed: 01/07/2009
• Published: 07/08/2010
• Est. Priority Date: 01/07/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tu, Hung-Jung, Chiou, Wen-Chih, CHEN, Hsien-Wei, Jeng, Shin-Puu
• Granted Patent: US 8,749,027 B2
• Time in Patent Office: Days
• US Class Current: 257/686
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA

Abstract

A die includes a seal-ring structure below a substrate. The seal-ring structure is disposed around at least one substrate region. At least one means for substantially preventing ion diffusion into the substrate region. The at least one means is coupled with the seal-ring structure.

Claims

1. A die comprising:

a seal-ring structure below a substrate, the seal-ring structure being around at least one substrate region; and

at least one means for substantially preventing ion diffusion into the substrate region, the at least one means being coupled with the seal-ring structure.

2. The die of claim 1, wherein the at least one means comprises a via structure.

3. The die of claim 2, wherein the via structure has a height of about a half of a thickness of the substrate or more.

4. The die of claim 2, wherein the via structure comprises a through-silicon-via (TSV) structure.

5. The die of claim 2, wherein the via structure comprises a plurality of vias disposed around at least one through-silicon-via (TSV) structure of the substrate region.

6. The die of claim 1, wherein the at least one means continuously extends around at least one through-silicon-via (TSV) structure of the substrate region.

7. A stacked structure comprising:

a first die including

a first seal-ring structure below a first substrate, the first seal-ring structure being around at least one first substrate region; and

at least one first means for substantially preventing ion diffusion into the first substrate region, the at least one first means being coupled with the first seal-ring structure; and

a second die electrically coupled with the first die.

8. The stacked structure of claim 7, wherein the second die comprises:

a second seal-ring structure below a second substrate, the second seal-ring structure being around at least one second substrate region; and

at least one second means for substantially preventing ions from diffusing into the second substrate region, the at least one second means being coupled with the second seal-ring structure.

9. The stacked structure of claim 8, wherein each of the first and second means comprises a via structure.

10. The stacked structure of claim 9, wherein the via structure has a height of about a half of a thickness of the first substrate or the second substrate or more.

11. The stacked structure of claim 10, wherein the via structure comprises a through-silicon-via (TSV) structure.

12. The stacked structure of claim 9, wherein the via structure comprises a plurality of vias disposed around at least one through-silicon-via (TSV) structure of the at least one chip.

13. The stacked structure of claim 8, wherein the each of the first means and the second means continuously extends around at least one through-silicon-via (TSV) structure.

14. The stacked structure of claim 8, wherein the first die further comprises at least one first bump structure coupled with the first seal-ring structure, the second die further comprises at least one second bump structure coupled with the at least one second means, and the at least one first bump structure is coupled with the at least one second bump structure.

15. The stacked structure of claim 14, wherein at least one of the first bump structure and the second bump structure continuously extends around the first substrate region or the second substrate region.

16. The stacked structure of claim 14, wherein at least one of the first bump structure and the second bump structure includes a plurality of bumps around the first substrate region or the second substrate region.

17. The stacked structure of claim 8, wherein the at least one first seal-ring structure is spaced from the at least one second means by an underfill material.

18. A system comprising:

a substrate board; and

a stacked structure being electrically coupled with the substrate board, wherein the stacked structure comprises;

a first die comprising;

a first seal-ring structure below a first substrate, the first seal-ring structure being around at least one first substrate region; and

at least one first means for substantially preventing ion diffusion into the first substrate region, the at least one first means being coupled with the first seal-ring structure; and

a second die electrically coupled with the first die.

19. The system of claim 18, wherein the second die comprises:

a second seal-ring structure below a second substrate, the second seal-ring structure being around at least one second substrate region; and

at least one second means for substantially preventing ions from diffusing into the second substrate region, the at least one second means being coupled with the second seal-ring structure.

20. The system of claim 19, wherein at least one of the first means and the second means comprises a TSV structure.