PACKAGED POWER SWITCHING DEVICE

• US 20100171543A1
• Filed: 01/08/2009
• Published: 07/08/2010
• Est. Priority Date: 01/08/2009
• Status: Abandoned Application

• Current Assignee: Ciclon Semiconductor Device Corp (Texas Instruments, Inc.)
• Original Assignee: Ciclon Semiconductor Device Corp (Texas Instruments, Inc.)
• Inventors: Jauregui, David, Bull, Christopher F., Herbsommer, Juan Alejandro, Korec, Jacek, Kocon, Christopher B.
• Application Number:
  US12/350,651
• Publication Number:
  US 20100171543A1
• Time in Patent Office: Days
• US Class Current: 327/436
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40095 Kinked
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/40139 with an intermediate bond, e.g. continuous strap daisy chain
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/40247 Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49431 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73219 Layer and TAB connectors
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 23/49524 the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/37 of an individual strap connector
• CPC Class Codes: H01L 24/40 of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H03K 17/6871 : the output circuit comprising more than one controlled field-effect transistor

Abstract

A packaged switching device for power applications includes at least one pair of power MOSFET transistor dies connected between upper and lower power source rail leads, a high side one of the pair of MOSFET transistor dies being connected to the upper power source rail lead and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead. At least one of the MOSFET transistor dies is configured for vertical current flow therethrough and has a source electrode at a backside thereof.

Claims

1. A packaged switching device for power applications, comprising:

at least one pair of power MOSFET transistor dies connected between upper and lower power source rail leads, a high side one of the pair of MOSFET transistor dies being connected to the upper power source rail lead and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead, wherein at least one of the MOSFET transistor dies is configured for vertical current flow therethrough and has a source electrode at a backside thereof.

2. The packaged switching device of claim 1, wherein both the high side and low side MOSFET transistor dies are n-channel devices.

3. The packaged switching device of claim 2, wherein both the high side and low side MOSFET transistor dies have vertical current flow therethrough and a source electrode at the backside thereof.

4. The packaged switching device of claim 3, wherein the MOSFET transistor dies are stacked one on top of the other with a source electrode of the high side MOSFET transistor die facing a drain electrode of the low side MOSFET transistor die.

5. The packaged switching device of claim 4,

wherein a drain electrode of the high side MOSFET transistor die is coupled to the upper power source rail lead by a conductive clip, and

wherein the drain electrode of the low side MOSFET transistor die is coupled to a switched output lead by a conductive clip.

6. The packaged switching device of claim 2, wherein one of the pair of MOSFET transistor dies has a source electrode at a backside thereof and the other one of the pair of MOSFET transistor dies has a drain electrode at a backside thereof.

7. The packaged switching device of claim 6, wherein the high side MOSFET transistor die has its source electrode at the backside thereof and the low side MOSFET transistor die has its drain electrode at the backside thereof.

8. The packaged switching device of claim 7,

wherein a drain electrode of the high side MOSFET transistor die is coupled to the upper power source rail lead by a conductive clip,

wherein a source electrode of the low side MOSFET transistor die is coupled to the lower power source rail lead by a conductive clip, and

wherein the source electrode of the high side MOSFET transistor die and the drain electrode of the low side MOSFET transistor die are electrically coupled together by being mounted on a switched output lead portion of a leadframe.

9. The packaged switching device of claim 6, wherein the low side MOSFET transistor die has its source electrode at the backside thereof and the high side MOSFET transistor die has its drain electrode at the back side thereof.

10. The packaged switching device of claim 9,

wherein a source electrode of the high side MOSFET transistor die and a drain electrode of the low side MOSFET transistor die are electrically coupled together, and to an output lead, by a conductive clip,

wherein the drain electrode of the high side MOSFET transistor die is mounted on the upper power source rail lead, and

wherein the source electrode of the low side MOSFET transistor die is mounted on the lower power source rail lead.

11. The packaged switching device of claim 1 wherein one of the pair of MOSFET transistor dies is an n-channel device and the other one of the pair of MOSFET transistor dies is a p-channel device, wherein drain electrodes of the MOSFET transistor dies are coupled together.

12. The packaged switching device of claim 1, wherein the high side MOSFET transistor die is a p-channel device and the low side MOSFET transistor die is an n-channel device, wherein drain electrodes of the MOSFET transistor dies are coupled together.

13. The packaged switching device of claim 12, wherein both the high side and low side MOSFET transistor dies have a source electrode at the backside thereof.

14. The packaged switching device of claim 13,

wherein the drain electrodes of the high side MOSFET transistor die and the low side MOSFET transistor die are electrically coupled together, and to an output lead, by a conductive clip,

wherein the source electrode of the high side MOSFET transistor die is mounted on the upper power source rail lead, and

wherein the source electrode of the low side MOSFET transistor die is mounted on the lower power source rail lead.

15. The packaged switching device of claim 12, wherein the drain electrode of the low side MOSFET transistor die is at a backside thereof and a source electrode of the high side MOSFET transistor die is at a backside thereof.

16. The packaged switching device of claim 15, wherein the MOSFET transistor dies are stacked one on top of the other with drain electrodes facing each other.

17. The packaged switching device of claim 16,

wherein a source electrode of the low side MOSFET transistor die is coupled to the lower power source rail lead by a conductive clip,

wherein the drain electrodes of the low side and high side MOSFET transistor dies are coupled to one another, and to an output lead, by a conductive clip, and

wherein the source electrode of the high side die is mounted on the upper power source rail lead.

18. The packaged switching device of claim 1, wherein the at least one MOSFET transistor die configured for vertical current flow therethrough and having its source electrode at the backside thereof is a LDMOS transistor device.

19. The packaged switching device of claim 1, wherein the MOSFET transistor dies are stacked one on top of the other.

20. A packaged switching device for power applications, comprising:

a leadframe having a plurality of lead frame portions for making electrical connections to packaged devices; and

at least one pair of power transistor dies having vertical current flow connected between upper and lower power source rail leads of said lead frame, a high side one of the pair of transistor dies being connected to the upper power source rail lead portion of said lead frame and a low side one of the pair of transistor dies being connected to the lower power source rail lead portion of the lead frame, the transistor dies being electrically coupled together at a switched output lead portion of the lead frame,

wherein each of the following connections is formed through either direct mounting of one of said dies on said lead frame, through direct connection of the dies in a stack or through a low inductance conductive clip connector;

(i) upper power source rail lead portion to high side transistor die;

(ii) high side transistor die to low side transistor die; and

(iii) low side transistor die to lower power source rail lead portion.

21. The packaged switching device of claim 20, wherein the transistor dies are LDMOS transistor dies, at least one of the LDMOS transistor dies having a source electrode at a backside thereof and drain and gate electrodes at a top side thereof.

22. The packaged switching device of claim 20, wherein the dies are stacked one on top of the other.

23. The packaged switching device of claim 20, wherein a connection between the high or low side transistor die to the switched output lead portion is also formed through either direct mounting of one of said dies on said lead frame or through a low inductance conductive clip connector.

24. A power converter for DC-to-DC voltage conversion, comprising:

control and driving circuitry; and

a packaged switching device coupled to said control and driving circuitry, wherein the packaged switching device comprises;

at least one pair of power LDMOS transistor dies configured for vertical current flow therethrough;

a lead frame for making connections to said dies; and

a molding material encapsulating said lead frame and dies,

wherein the dies are connected in a push-pull configuration between upper and lower power source lead portions of the lead frame, a high side one of the pair LDMOS transistor dies being connected to the upper power source rail lead portion and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead portion, wherein at least one of the dies has a source electrode at a backside thereof.