System And Method To Read And Write Data A Magnetic Tunnel Junction Element
First Claim
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1. A device comprising:
- a spin transfer torque (STT) magnetic tunnel junction (MTJ) element; and
a transistor coupled to the STT-MTJ element,wherein the transistor includes a first gate and a second gate.
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Abstract
A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device includes a spin transfer torque magnetic tunnel junction (STT-MTJ) element and a transistor with a first gate and a second gate coupled to the STT-MTJ element.
24 Citations
25 Claims
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1. A device comprising:
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a spin transfer torque (STT) magnetic tunnel junction (MTJ) element; and a transistor coupled to the STT-MTJ element, wherein the transistor includes a first gate and a second gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A memory comprising:
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an array of memory cells, the array including a plurality of columns, each memory cell in the array of memory cells including a magnetic tunnel junction (MTJ) device coupled to a dual-gate transistor, the dual-gate transistor having a first gate coupled to a word line of a plurality of word lines and having a second gate coupled to a write enable line of a plurality of write enable lines; wherein at least one column of the plurality of columns is controllable by the write enable line during a write operation. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A device comprising:
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a magnetic tunnel junction (MTJ) element; and a common portion of a read/write data path that includes a transistor coupled to the MTJ element, wherein the transistor includes a first gate and a second gate. - View Dependent Claims (20)
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21. A method for storing data in a spin-torque transfer magnetoresistive random access memory (STT-MRAM), the method comprising:
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writing data into a magnetic tunnel junction (MTJ) element; and reading data out of the MTJ element; wherein the MTJ element is coupled to a transistor including a first gate and a second gate. - View Dependent Claims (22, 23, 24, 25)
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Specification