ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a thin film transistor substrate, the method comprising:
- forming a gate line and a gate electrode connected with the gate line on the substrate;
stepwise forming a first border insulating layer having a first containment hole and a second containment hole which expose the gate electrode;
forming a gate insulating layer to be filled within the first containment hole;
forming a data line intersecting the gate line, a source electrode connected with the data line, a drain electrode facing the source electrode, a pixel electrode connected with the drain electrode, and a second border insulating layer formed on the source electrode, the drain electrode, and the data line;
forming a semiconductive layer constituting a channel between the source electrode and the drain electrode within an area provided by the first border insulating layer and the second border insulating layer; and
forming a protective layer within the second containment hole to cover the semiconductive layer and its peripheral area.
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Accused Products
Abstract
The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.
The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
12 Citations
17 Claims
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1. A method of manufacturing a thin film transistor substrate, the method comprising:
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forming a gate line and a gate electrode connected with the gate line on the substrate; stepwise forming a first border insulating layer having a first containment hole and a second containment hole which expose the gate electrode; forming a gate insulating layer to be filled within the first containment hole; forming a data line intersecting the gate line, a source electrode connected with the data line, a drain electrode facing the source electrode, a pixel electrode connected with the drain electrode, and a second border insulating layer formed on the source electrode, the drain electrode, and the data line; forming a semiconductive layer constituting a channel between the source electrode and the drain electrode within an area provided by the first border insulating layer and the second border insulating layer; and forming a protective layer within the second containment hole to cover the semiconductive layer and its peripheral area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification