Organic light emitting display device and method of manufacturing the same
First Claim
1. An organic light emitting display device, comprising:
- a substrate that includes a first region and a second region;
a first thin film transistor that comprises a gate electrode formed in the first region disposed on the substrate, an activation layer insulated from the gate electrode by a gate insulating layer and formed in a structure where a first semiconductor layer and a second semiconductor layer are sequentially stacked, and source and drain electrodes electrically and physically coupled to the activation layer, with the first oxide semiconductor layer having a higher carrier concentration compared to that of the second oxide semiconductor layer;
a second thin film transistor that comprises a gate electrode formed in the second region disposed on the substrate, an activation layer insulated from the gate electrode by a gate insulating layer and formed of the second oxide semiconductor layer, and source and drain electrodes electrically and physically coupled to the activation layer;
an insulating layer that is formed on the second thin film transistor and has a via hole in order that one of the source and drain electrodes of the second thin film transistor is exposed; and
an organic light emitting diode that comprises a first electrode formed on the insulating layer disposed in the second region and the first electrode electrically coupled to one of the source and drain electrodes of the second thin film transistor through the via hole, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer.
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Accused Products
Abstract
Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.
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Citations
20 Claims
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1. An organic light emitting display device, comprising:
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a substrate that includes a first region and a second region; a first thin film transistor that comprises a gate electrode formed in the first region disposed on the substrate, an activation layer insulated from the gate electrode by a gate insulating layer and formed in a structure where a first semiconductor layer and a second semiconductor layer are sequentially stacked, and source and drain electrodes electrically and physically coupled to the activation layer, with the first oxide semiconductor layer having a higher carrier concentration compared to that of the second oxide semiconductor layer; a second thin film transistor that comprises a gate electrode formed in the second region disposed on the substrate, an activation layer insulated from the gate electrode by a gate insulating layer and formed of the second oxide semiconductor layer, and source and drain electrodes electrically and physically coupled to the activation layer; an insulating layer that is formed on the second thin film transistor and has a via hole in order that one of the source and drain electrodes of the second thin film transistor is exposed; and an organic light emitting diode that comprises a first electrode formed on the insulating layer disposed in the second region and the first electrode electrically coupled to one of the source and drain electrodes of the second thin film transistor through the via hole, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing an organic light emitting display device, comprising:
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preparing a substrate that includes a first region and a second region; forming gate electrodes of first and second thin film transistors respectively in the first and second regions on the substrate; forming a gate insulating layer on the gate electrodes formed in the first and second regions; forming a first activation layer formed in a structure where a first semiconductor layer and a second semiconductor layer are stacked on the gate insulating layer in the first region, the first oxide semiconductor layer having a higher carrier concentration compared to that of the second oxide semiconductor layer, and forming a second activation layer formed of the second oxide semiconductor layer on the gate insulating layer in the second region; forming source and drain electrodes to be electrically and physically coupled to the first and second activation layers respectively disposed in the first and second regions; forming an insulating layer on the second thin film transistor and then forming a via hole in order that one of the source and drain electrodes of the second thin film transistor is exposed; and forming an organic light emitting diode that comprises a first electrode formed on the insulating layer in the second region and the first electrode electrically coupled to one of the source and drain electrodes of the second thin film transistor through the via hole, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. An organic light emitting display device, comprising:
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a first thin film transistor disposed on a non-pixel region of a substrate, the first thin film transistor comprising a first activation layer formed by a first semiconductor layer and a second semiconductor layer which are disposed in immediate physical contact with each other, with the first oxide semiconductor layer having a different value of carrier concentration compared to that of the second oxide semiconductor layer; a second thin film transistor disposed on a pixel region of the substrate, the second thin film transistor having a second activation layer formed of one of the first and second oxide semiconductor layers. - View Dependent Claims (19, 20)
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Specification