THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME

• US 20100176388A1
• Filed: 01/11/2010
• Published: 07/15/2010
• Est. Priority Date: 01/12/2009
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Choi, Chaungi, Song, Young-Woo, Lee, Jong-Hyuk, Ha, Jae-Heung
• Application Number:
  US12/685,207
• Publication Number:
  US 20100176388A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A thin film transistor which has a compound semiconductor including oxygen as an activation layer, a method of manufacturing the thin film transistor, and a flat panel display device having the thin film transistor, of which the thin film transistor comprises: a gate electrode formed on a substrate; an activation layer formed on the gate electrode, insulated from the gate electrode by a gate insulating film, and formed of a compound semiconductor including oxygen; a passivation layer formed on the activation layer; and source and drain electrodes formed to contact the activation layer, wherein the passivation layer includes titanium oxide (TiO_x) or titanium oxynitride (TiO_xN_y).

Claims

1. A thin film transistor, comprising:

a substrate;

a gate electrode formed on the substrate;

an activation layer formed on the gate electrode, insulated from the gate electrode by a gate insulating film, and formed of a compound semiconductor including oxygen;

a passivation layer formed on the activation layer; and

source and drain electrodes formed to contact the activation layer,

wherein the passivation layer comprises a titanium oxide (TiO_x).

2. The thin film transistor of claim 1, wherein the passivation layer is formed to cover the activation layer, and the source and drain electrodes contact the activation layer through contact holes formed in the passivation layer.

3. The thin film transistor of claim 1, wherein the compound semiconductor comprises zinc oxide (ZnO).

4. The thin film transistor of claim 3, wherein the compound semiconductor is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf) and vanadium (V).

5. The thin film transistor of claim 1, wherein the TiO_x is titanium oxynitride (TiO_xN_y).

6. The thin film transistor of claim 1, further comprising:

a buffer layer formed between the substrate and the gate electrode.

7. The thin film transistor of claim 1, wherein the activation layer comprises:

a channel region, a source region, and a drain region,

wherein the passivation layer is formed to cover only the channel region of the activation layer and the source and drain electrodes are respectively connected to the source and drain regions of the activation layer.

8. The thin film transistor of claim 7, wherein the source and drain electrodes are disposed directly on the source and drain regions of the activation layer, respectively.

9. The thin film transistor of claim 1, wherein the compound semiconductor comprises at least one of ZnO, ZnGaO, ZnInO, ZnSnO, and GaInZnO.

10. The thin film transistor for claim 1, wherein x of TiO_x is in a range of about 0.3 to about 3.0.

11. The thin film transistor of claim 5, wherein x of TiO_xN_y is in a range of about 0.3 to about 3.0, and y of TiO_xN_y is in a range of about 0.3 to about 5.0.

12. A method of manufacturing a thin film transistor, comprising:

forming a gate electrode on a substrate;

forming a gate insulating film on of the substrate to cover the gate electrode;

forming an activation layer on the gate insulating film, the activation layer being formed of a compound semiconductor including oxygen;

forming a passivation layer that comprises a titanium oxide (TiO_x) on the activation layer; and

forming source and drain electrodes to contact the activation layer.

13. The method of manufacturing the thin film transistor of claim 12, wherein the forming the passivation layer comprises:

forming the passivation layer on the activation layer; and

forming contact holes in the passivation layer.

14. The method of manufacturing the thin film transistor of claim 13, wherein the forming the source and drain electrodes comprises:

forming a conductive layer on the passivation layer such that the contact holes are filled and the conductive layer contacts the activation layer via the contact holes; and

patterning the conductive layer to form the source and drain electrodes.

15. The method of manufacturing the thin film transistor of claim 12, wherein the compound semiconductor includes zinc oxide (ZnO).

16. The method of manufacturing the thin film transistor of claim 15, wherein the compound semiconductor is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf) and vanadium (V).

17. The method of manufacturing the thin film transistor of claim 12, wherein the TiO_x is titanium oxynitride (TiO_xN_y).

18. The method of manufacturing the thin film transistor of claim 12, wherein the passivation layer is formed using a direct current (DC) reactive sputtering method.

19. The method of manufacturing the thin film transistor of claim 12, wherein the forming the source and drain electrodes comprises using the passivation layer as an etch stop layer.

20. The method of manufacturing the thin film transistor of claim 12, further comprising:

forming a buffer layer on the substrate before the forming of the gate electrode.

21. The method of manufacturing the thin film transistor of claim 12, wherein the activation layer comprises:

a channel, a source, and a drain region, and the method further comprises;

patterning the passivation layer to remain only on the channel region of the activation layer.

22. A flat panel display device, comprising:

a first substrate on which a plurality of pixels, each having a first electrode, are defined by a plurality of first conductive lines and second conductive lines;

thin film transistors respectively connected to the first electrodes of the pixels to control signals supplied to the respective pixels from the first conductive lines and the second conductive lines formed on the first substrate;

a second substrate on which a second electrode is formed, the second substrate being disposed to face the first substrate; and

a liquid crystal layer disposed between the first electrode and the second electrode,

wherein each thin film transistor comprises;

a gate electrode formed on the first substrate;

an activation layer formed on the gate electrode, insulated from the gate electrode by a gate insulating film, and formed of a compound semiconductor including oxygen;

a passivation layer formed on the activation layer; and

source and drain electrodes formed to contact the activation layer,

wherein the passivation layer comprises a titanium oxide (TiO_x).

23. The flat panel display device of claim 22, wherein the passivation layer is formed to cover the activation layer, and the source and drain electrodes contact the activation layer through contact holes formed in the passivation layer.

24. The flat panel display device of claim 22, wherein the compound semiconductor comprises zinc oxide (ZnO).

25. The flat panel display device of claim 24, wherein the compound semiconductor is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf) and vanadium (V).

26. The flat panel display device of claim 22, wherein the TiO_x is titanium oxynitride (TiO_xN_y).

27. A flat panel display device, comprising:

a first substrate on which an organic light emitting device is formed, the organic light emitting device including a first electrode, a second electrode, and an organic thin film layer disposed between the first electrode and the second electrode;

a thin film transistor disposed on the first substrate and connected to the first electrode of the organic light emitting device to control the operation of the organic light emitting device; and

a second substrate disposed to face the first substrate,

wherein the thin film transistor comprises;

a gate electrode formed on the first substrate;

an activation layer formed on the gate electrode and insulated from the gate electrode by a gate insulating film, and formed of a compound semiconductor including oxygen;

a passivation layer formed on the activation layer; and

source and drain electrodes formed to contact the activation layer,

wherein the passivation layer comprises a titanium oxide (TiO_x).

28. The flat panel display device of claim 27, wherein the passivation layer is formed to cover the activation layer, and the source and drain electrodes contact the activation layer through contact holes formed in the passivation layer.

29. The flat panel display device of claim 27, wherein the compound semiconductor includes zinc oxide (ZnO).

30. The flat panel display device of claim 29, wherein the compound semiconductor is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf) and vanadium (V).

31. The flat panel display device of claim 27, wherein the TiO_x is titanium oxynitride (TiO_xN_y).