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Semiconductor Device

  • US 20100176443A1
  • Filed: 06/13/2008
  • Published: 07/15/2010
  • Est. Priority Date: 06/15/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer of one conductivity type including an inside region and an outside region disposed outside the inside region;

    a plurality of trenches formed in the inside region of the semiconductor layer so as to be arranged with predetermined spaces, an opening end of each of the trenches being positioned on an upper surface side of the semiconductor layer;

    a plurality of diffusion regions of an inverse conductivity type formed in the outside region of the semiconductor layer so as to be arranged with predetermined spaces, an upper surface of each of the diffusion regions being exposed to the upper surface side of the semiconductor layer;

    a plurality of embedded electrodes filled in the plurality of trenches; and

    an electrode layer formed on the upper surface of the semiconductor layer so as to cover the inside region and the outside region of the semiconductor layer, whereinthe inside region of the semiconductor layer has a structure in which each region between the neighboring trenches in the semiconductor layer becomes a current passage, and each region between the neighboring trenches in the semiconductor layer is blocked with a depletion layer formed around the trench so that the current passage is interrupted, while at least a part of the depletion layer formed around the trench is deleted so that the current passage is opened, anda junction portion between the semiconductor layer and the diffusion region makes a Zener diode in the outside region of the semiconductor layer.

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