Semiconductor device and method of making the same

• US 20100176466A1
• Filed: 01/07/2010
• Published: 07/15/2010
• Est. Priority Date: 01/09/2009
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo, Inoue, Masaki
• Granted Patent: US 8,283,738 B2
• Time in Patent Office: Days
• US Class Current: 257/415
• CPC Class Codes: B81B 2207/092 Buried interconnects in the substrate or in the lid
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/148 Charge coupled imagers individual charge coupled devices H01L29/765

Abstract

A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

Claims

1. A semiconductor device comprising:

a sensor member having a surface and including a first sensing section, the first sensing section including first and second portions located on the surface side of the sensor member and electrically insulated from each other; and

a cap member having a first surface joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member, the cap member including a cross wiring portion for electrically connecting the first portion to the second portion.

2. The semiconductor device according to claim 1, wherein

the cross wiring portion includes a cross wire extending parallel to the first surface of the cap member.

3. The semiconductor device according to claim 1, wherein

the cap member has a second surface opposite to the first surface,

the cross wiring portion includes a cross wire, a first through electrode, and a second through electrode,

the cross wire is located on the second surface of the cap member and extends parallel to the second surface of the cap member,

the first through electrode extends from the first surface to the second surface of the cap member and has a first end electrically connected to the cross wire and a second end electrically connected to the first portion, and

the second through electrode extends from the first surface to the second surface of the cap member and has a first end electrically connected to the cross wire and a second end electrically connected to the second portion.

4. The semiconductor device according to claim 3, wherein

the cap member includes a substrate having a second sensing section, the cap member further including a partition substrate having first and second surfaces opposite to each other,

the first surface of the partition substrate defines the first surface of the cap member and is joined to the surface of the sensor member to form a first sealed space between the sensor member and the cap member,

the first sensing section is located in the first sealed space,

the second surface of the partition substrate is joined to the substrate to form a second sealed space between the substrate and the partition substrate, and

the second sensing section is located to correspond to the second sealed space.

5. The semiconductor device according to claim 4, wherein

the first sealed space and the second sealed space are under different pressures.

6. The semiconductor device according to claim 4, wherein

the first sealed space and the second sealed space are filled with different gases.

7. The semiconductor device according to claim 1, wherein

the cross wiring portion includes a cross wire, a first connection portion, and a second connection portion,

the cross wire is located on the first surface of the cap member,

the first connection portion is located on the cross wire and has a first end electrically connected to the cross wire and a second end electrically connected to the first portion, and

the second connection portion is located on the cross wire and has a first end electrically connected to the cross wire and a second end electrically connected to the second portion.

8. The semiconductor device according to claim 7, wherein

the cap member includes a through electrode, and

the through electrode extends from the first surface to the second surface of the cap member and has a first end electrically connected to the cross wire and a second end exposed to the second surface of the cap member.

9. The semiconductor device according to claim 7, wherein

the cap member includes a substrate and an aerial wire reinforcement portion on the substrate, and

the aerial wire reinforcement portion partially supports the cross wire in such a manner that the cross wire is suspended above the substrate.

10. A semiconductor device comprising:

a sensor member including a substrate, an insulation layer located on the substrate, and a first sensing section including first and second portions located on the insulation layer and electrically insulated from each other, the sensor member further including a cross wiring portion for electrically connecting the first portion to the second portion, the cross wiring portion located on the insulation layer and extending parallel to a surface of the insulation layer, and

a cap member having a first surface joined to the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member, wherein

the first portion is located on a first end of the cross wiring portion and electrically connected to the first end of the cross wiring portion, and

the second portion is located on a second end of the cross wiring portion and electrically connected to the second end of the cross wiring portion.

11. The semiconductor device according to claim 10, wherein

the cap member has a second surface opposite to the first surface and includes a through electrode extending from the first surface to the second surface of the cap member, and

the through electrode has a first end electrically connected to the first portion or the second portion and a second end exposed to the second surface of the cap member.

12. The semiconductor device according to claim 10, wherein

the cap member includes a substrate having a second sensing section, the cap member further including a partition substrate having first and second surfaces opposite to each other,

the first surface of the partition substrate defines the first surface of the cap member and is joined to the surface of the sensor member to form a first sealed space between the sensor member and the cap member,

the first sensing section is located in the first sealed space,

the second surface of the partition substrate is joined to the substrate to form a second sealed space between the substrate and the partition substrate, and

the second sensing section is located to correspond to the second sealed space.

13. The semiconductor device according to claim 12, wherein

the first sealed space and the second sealed space are under different pressures.

14. The semiconductor device according to claim 12, wherein

the first sealed space and the second sealed space are filled with different gases.

15. A method of making a semiconductor device comprising:

preparing a sensor member having a surface and including a first sensing section, the first sensing section having a first portion located on the surface side of the sensor member and a second portion electrically insulated from the first portion;

preparing a cap member having a first surface and a second surface opposite to the first surface;

joining the surface of the sensor member to the first surface of the cap member in such a manner that the first sensing section is sealed by the sensor member and the cap member; and

forming a cross wiring portion for electrically connecting the first portion to the second portion, wherein

the forming of the cross wiring portion includes forming a first through electrode, forming a second through electrode, and forming a cross wire,

the first through electrode penetrates the cap member from the first surface to the second surface and has a first end electrically connected to the first portion,

the second through electrode penetrates the cap member from the first surface to the second surface and has a first end electrically connected to the second portion, and

the cross wire is located on the second surface and electrically connects a second end of the first through electrode to a second end of the second through electrode.

16. The method according to claim 15, wherein

the preparing of the cap member includes preparing a substrate having a second sensing section and preparing a partition substrate having first and second surfaces opposite to each other,

the joining of the surface of the sensor member includes joining the surface of the sensor member to the first surface of the partition substrate to form a first sealed space between the sensor member and the cap member and placing the first sensing section in the first-sealed space, and

the preparing of the cap member further includes joining the substrate to the second surface of the partition substrate to form a second sealed space between the substrate and the partition substrate and placing the second sensing section at a location corresponding to the second sealed space.

17. The method according to claim 16, wherein

the joining of the surface of the sensor member further includes maintaining the first sealed space at a first pressure, and

the preparing of the cap member further includes maintaining the second sealed space at a second pressure different from the first pressure.

18. The method according to claim 16, wherein

the joining of the surface of the sensor member further includes filling the first sealed space with a first gas, and

the preparing of the cap member further includes filling the second sealed space with a second gas different from the first gas.

19. A method of making a semiconductor device comprising:

preparing a sensor member having a surface and including a first sensing section, the first sensing section including first and second portions located on the surface side of the sensor member and electrically insulated from each other;

preparing a cap member having a first surface, the preparing of the cap member including preparing a substrate, forming an insulation layer on the substrate, and forming a cross wiring portion for electrically connecting the first and second portions of the first sensing section

joining the surface of the sensor member to the first surface of the cap member in such a manner that the first sensing section is sealed by the sensor member and the cap member, wherein

the forming of the cross wiring portion includes forming a cross wire on the insulation layer in such a manner that the cross wire extends parallel to a surface of the insulation layer, forming a first connection portion at a first location on the cross wire, and forming a second connection portion at a second location on the cross wire, and

the joining of the surface of the sensor member to the first surface of the cap member includes joining the first and second portions of the first sensing section to the first and second connection portions of the cross wiring portion, respectively.

20. The method according to claim 19, further comprising:

forming a through electrode extending from the first surface to a second surface, opposite to the first surface, of the cap member in such a manner that a first end of the through electrode is electrically connected to the cross wire and a second end of the through electrode is exposed to the second surface of the cap member, wherein

the forming of the through electrode is performed after the joining of the surface of the sensor member to the first surface of the cap member.

21. The method according to claim 19, wherein

the preparing of the cap member includes forming an aerial wire reinforcement portion for partially supporting the cross wire so that the cross wire is suspended above the substrate, and

the forming of the aerial wire reinforcement portion includes partially removing the insulation layer in such a manner that the insulation layer is left corresponding to the first and second connection portions.

22. A method of making a semiconductor device comprising:

preparing a sensor member, the preparing of the sensor member including preparing a substrate, forming an insulation layer on the substrate, forming a cross wiring portion on the insulation layer in such a manner that the cross wiring portion extends parallel to a surface of the insulation layer, and forming a first sensing section including first and second portions electrically insulated from each other;

preparing a cap member having a first surface; and

joining the sensor member to the first surface of the cap member in such a manner that the first sensing section is sealed by the sensor member and the cap member,

wherein the forming of the first sensing section includes electrically connecting the first portion to the second portion through the cross wiring portion by placing the first portion on a first end of the cross wiring portion and by placing the second portion on a second end of the cross wiring portion.

23. The method according to claim 22, further comprising:

forming a through electrode extending from the first surface to a second surface, opposite to the first surface, of the cap member in such a manner that a first end of the through electrode is electrically connected to the first portion or the second portion and a second end of the through electrode is exposed to the second surface of the cap member, wherein

the forming of the through electrode is performed after the joining of the sensor member.

24. The method according to claim 22, wherein

the preparing of the cap member includes preparing a substrate having a second sensing section and preparing a partition substrate having first and second surfaces opposite to each other,

the joining of the sensor member includes joining the sensor member to the first surface of the partition substrate to form a first sealed space between the sensor member and the cap member and placing the first sensing section in the first sealed space, and

the preparing of the cap member further includes joining the substrate to the second surface of the partition substrate to form a second sealed space between the substrate and the partition substrate and placing the second sensing section at a location corresponding to the second sealed space.

25. The method according to claim 24, wherein

the joining of the sensor member further includes maintaining the first sealed space at a first pressure, and

the preparing of the cap member further includes maintaining the second sealed space at a second pressure different from the first pressure.

26. The method according to claim 24, wherein

the joining of the sensor member further includes filling the first sealed space with a first gas, and

the preparing of the cap member further includes filling the second sealed space with a second gas different from the first gas.