Methods of Etching Trenches Into Silicon of a Semiconductor Substrate, Methods of Forming Trench Isolation in Silicon of a Semiconductor Substrate, and Methods of Forming a Plurality of Diodes
First Claim
1. A method of etching trenches into silicon of a semiconductor substrate, comprising:
- forming a mask over silicon of a semiconductor substrate, the mask comprising trenches formed there-through; and
plasma etching trenches into the silicon of the semiconductor substrate using the mask, the plasma etching comprising forming an etching plasma using precursor gases comprising SF6, an oxygen-containing compound, and a nitrogen-containing compound.
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Accused Products
Abstract
A method of etching trenches into silicon of a semiconductor substrate includes forming a mask over silicon of a semiconductor substrate, with the mask comprising trenches formed there-through. Plasma etching is conducted to form trenches into the silicon of the semiconductor substrate using the mask. In one embodiment, the plasma etching includes forming an etching plasma using precursor gases which include SF6, an oxygen-containing compound, and a nitrogen-containing compound. In one embodiment, the plasma etching includes an etching plasma which includes a sulfur-containing component, an oxygen-containing component, and NFx.
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Citations
29 Claims
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1. A method of etching trenches into silicon of a semiconductor substrate, comprising:
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forming a mask over silicon of a semiconductor substrate, the mask comprising trenches formed there-through; and plasma etching trenches into the silicon of the semiconductor substrate using the mask, the plasma etching comprising forming an etching plasma using precursor gases comprising SF6, an oxygen-containing compound, and a nitrogen-containing compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of etching trenches into silicon of a semiconductor substrate, comprising:
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forming a mask over silicon of a semiconductor substrate, the mask comprising trenches formed there-through; and plasma etching trenches into the silicon of the semiconductor substrate using the mask, the plasma etching comprising an etching plasma comprising a sulfur-containing component, an oxygen-containing component, and NFx. - View Dependent Claims (12, 13, 14)
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15-23. -23. (canceled)
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24. A method of forming a plurality of diodes, comprising:
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forming a first mask over silicon of a semiconductor substrate, the first mask comprising first trenches formed there-through running in a first major direction over the substrate, the first mask comprising a hardmask layer; plasma etching first trenches into the silicon of the semiconductor substrate using the first mask, the plasma etching of the first trenches into the silicon comprising forming an etching plasma using precursor gases comprising SF6, an oxygen-containing compound, and a nitrogen-containing compound; forming a second mask over the first trenches, the second mask comprising second trenches formed there-through running in a second major direction over the substrate which is orthogonal to the first major direction, the second mask comprising the hardmask layer of the first mask, the second trenches extending through the hardmask layer of the first mask; plasma etching second trenches into the silicon of the semiconductor substrate using the second mask, the plasma etching of the second trenches into the silicon comprising forming an etching plasma using precursor gases comprising SF6, an oxygen-containing compound, and a nitrogen-containing compound, the plasma etching of the second trenches into the silicon forming spaced silicon-comprising mesas; and providing individual diodes on individual of the mesas and depositing insulative material to be received about the spaced silicon-comprising mesas. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification