LOW-TEMPERATURE SURFACE DOPING/ALLOYING/COATING OF LARGE SCALE SEMICONDUCTOR NANOWIRE ARRAYS

• US 20100180950A1
• Filed: 11/13/2009
• Published: 07/22/2010
• Est. Priority Date: 11/14/2008
• Status: Abandoned Application

• Current Assignee: University of Connecticut (State of Connecticut)
• Original Assignee: University of Connecticut (State of Connecticut)
• Inventors: Gao, Pu-Xian, Shimpi, Paresh
• Application Number:
  US12/618,689
• Publication Number:
  US 20100180950A1
• Time in Patent Office: Days
• US Class Current: 136/265
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/228 using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes H01L21/221 - H01L21/222 take precedence
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/227 further characterised by the doping material H01L29/2206 takes precedence
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method and corresponding system for providing a uniform nanowire array including uniform nanowires composed of at least three elements is presented. An embodiment of the method includes growing an array of two-element nanowires, and thereafter uniformly doping or alloying each two-element nanowire, with respect to each other two-element nanowire, with at least one doping or alloying element through a wet chemical synthesis with a precursor solution, to produce the uniform array of nanowires composed of at least three elements. The two-element nanowire can include Zn and O, and the at least one doping or alloying element can be Mg, Cd, Mn, Cu, Be, Fe, and Co. Applications of the three-element nanowire array include solar cells and light emitting diodes with improved efficiencies over existing technologies.

Claims

1. A method of producing a uniform nanowire array, the method comprising:

a) growing an array of two-element nanowires; and

b) uniformly doping or alloying each two-element nanowire, with respect to each other two-element nanowire, with at least one doping or alloying element, through a wet chemical synthesis with a precursor solution to produce a uniform array of at least three-element nanowires.

2. The method of claim 1 wherein growing the array of two-element nanowires further includes uniformly varying a characteristic of each two-element nanowire, the characteristic being at least one of a group consisting of physical dimensions, processing time, temperature, packing density, energy band-gap, and composition of each two-element nanowire.

3. The method of claim 1 wherein growing the array of two-element nanowires includes seeded growing of the array of two-element nanowires.

4. The method of claim 1 wherein growing the array of two-element nanowires further includes performing a hydrothermal or solvathermal synthesis.

5. The method of claim 1 wherein uniformly doping or alloying each two-element nanowire further includes uniformly controlling a concentration and band-gap of each at least three-element nanowire by varying a fabrication parameter selected from a group consisting of temperature, processing time, pH and pressure.

6. The method of claim 1 wherein uniformly doping or alloying each two-element nanowire further includes uniformly controlling a concentration of each element of each at least three-element nanowire.

7. The method of claim 1 wherein the wet chemical synthesis is a hydrothermal or solvathermal synthesis performed at a temperature of less than 300°

C.

8. The method of claim 7 wherein the hydrothermal or solvathermal synthesis is performed at a temperature in a range of between about 100°

C. and about 200°

C.

9. The method of claim 1 wherein the two-element nanowire comprises Zn and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Cd, Mn, Cu, Be, Fe, and Co.

10. The method of claim 1 wherein the two-element nanowire comprises Cu and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Mg, Cd, Be, Fe, and Co.

11. The method of claim 1 wherein the two-element nanowire comprises Cd and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Zn, Mn, Cu, Be, Fe, and Co.

12. The method of claim 1 wherein the two-element nanowire comprises Mg and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Be, Fe, and Co.

13. The method of claim 1 wherein the two-element nanowire comprises Fe and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Mg, Be, and Co.

14. The method of claim 1 wherein the two-element nanowire comprises Be and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Fe, Mg, and Co.

15. The method of claim 1 wherein the two-element nanowire comprises Mn and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Cu, Fe, Mg, Be, and Co.

16. The method of claim 1 further including the step of annealing the uniform nanowire array of at least three-element nanowires.

17. The method of claim 16, wherein the step of annealing is performed at a temperature in a range of between about 200°

C. and about 1000°

C., for a time period in a range of between about 5 minutes and about 10 hours.

18. The method of claim 1 wherein uniformly doping or alloying each two-element nanowire is performed by uniformly doping or alloying each two-element nanowire with the doping or alloying element with respect to a radial cross section of each two-element nanowire.

19. A system for providing a uniform nanowire array, the system comprising:

a first module configured to grow an array of two-element nanowires;

a second module configured to prepare a precursor solution including at least one doping or alloying element and a base; and

a third module configured to provide a uniform nanowire array by using a wet chemical synthesis with the precursor solution, to provide an at least three-element nanowire array including a uniform composition distribution.

20. The system of claim 19 wherein the first module further includes uniformly varying a characteristic of each two-element nanowire, the characteristic being at least one of a group consisting of physical dimensions, processing time, temperature, packing density, energy band-gap, and composition of each two-element nanowire.

21. The system of claim 19 wherein the first module further includes a seeded growing of the array of two-element nanowires.

22. The system of claim 19 wherein the first module further includes a hydrothermal or solvathermal synthesis module.

23. The system of claim 19 wherein the uniform composition distribution is achieved by controlling a concentration and band-gap of each at least three-element nanowire by varying a fabrication parameter selected from a group consisting of temperature, processing time, pH and pressure.

24. The system of claim 19 wherein the uniform composition distribution is achieved by controlling a concentration of each element of each at least three-element nanowire.

25. The system of claim 19 wherein the wet chemical synthesis is a hydrothermal or solvathermal synthesis performed at a temperature of less than 300°

C.

26. The system of claim 25 wherein the hydrothermal or solvathermal synthesis is performed at a temperature in a range of between about 100°

C. and about 200°

C.

27. The system of claim 19 wherein the two-element nanowire comprises Zn and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Cd, Mn, Cu, Be, Fe, and Co.

28. The system of claim 19 wherein the two-element nanowire comprises Cu and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Mg, Cd, Be, Fe, Mn, and Co.

29. The system of claim 19 wherein the two-element nanowire comprises Cd and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Zn, Mn, Cu, Be, Fe, and Co.

30. The system of claim 19 wherein the two-element nanowire comprises Mg and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Be, Fe, and Co.

31. The method of claim 19 wherein the two-element nanowire comprises Fe and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Mg, Be, and Co.

32. The method of claim 19 wherein the two-element nanowire comprises Be and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Fe, Mg, and Co.

33. The method of claim 19 wherein the two-element nanowire comprises Mn and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Cu, Fe, Mg, Be, and Co.

34. The system of claim 19 further including the step of annealing the uniform nanowire array.

35. The system of claim 34 further including annealing the uniform nanowire array at a temperature in a range of between about 200°

C. and about 1000°

C., for a time period in a range of between about 5 minutes and about 10 hours.

36. The system of claim 19 wherein the uniform composition distribution is achieved by uniformly doping or alloying each two-element nanowire with the doping or alloying element with respect to a radial cross section of each two-element nanowire.

37. A method of producing a uniform nanowire array, the method comprising:

uniformly doping or alloying each two-element nanowire of a two-element nanowire array with at least a third element through a wet chemical synthesis with the precursor solution, to form an array of at least three-element nanowires.

38. The method of claim 37 wherein uniformly doping or alloying each two-element nanowire further includes uniformly controlling a concentration and band-gap of each at least three-element nanowire by varying a fabrication parameter selected from the group consisting of temperature, processing time, pH and pressure.

39. The method of claim 37 wherein uniformly doping or alloying each two-element nanowire further includes uniformly controlling a concentration of each element of each at least three-element nanowire.

40. The method of claim 37 wherein the wet chemical synthesis is a hydrothermal or solvathermal synthesis performed at a temperature of less than 300°

C.

41. The method of claim 40 wherein the hydrothermal or solvathermal synthesis is performed at a temperature in a range of between about 100°

C. and about 200°

C.

42. The method of claim 37 wherein the two-element nanowire comprises Zn and O and the at least third element is at least one of a group consisting of Mg, Cd, Mn, Cu, Be, Fe, and Co.

43. The method of claim 37 wherein the two-element nanowire comprises Cu and O and the at least third element is at least one of a group consisting of Zn, Mg, Cd, Be, Fe, Mn, and Co.

44. The method of claim 37 wherein the two-element nanowire comprises Cd and O and the at least third element is at least one of a group consisting of Mg, Zn, Mn, Cu, Be, Fe, and Co.

45. The method of claim 37 wherein the two-element nanowire comprises Mg and O and the at least third element is at least one of a group consisting of Zn, Cd, Mn, Cu, Be, Fe, and Co.

46. The method of claim 37 wherein the two-element nanowire comprises Fe and O and the at least third element is at least one of a group consisting of Zn, Cd, Mn, Cu, Mg, Be, and Co.

47. The method of claim 37 wherein the two-element nanowire comprises Be and O and the at least third element is at least one of a group consisting of Zn, Cd, Mn, Cu, Fe, Mg, and Co.

48. The method of claim 37 wherein the two-element nanowire comprises Mn and O and the at least third element is at least one of a group consisting of Zn, Cd, Cu, Fe, Mg, Be, and Co.

49. The method of claim 37 further including the step of annealing the uniform nanowire array.

50. The method of claim 49 further including annealing the uniform nanowire array at a temperature in a range of between about 200°

C. and about 1000°

C., for a time period in a range of between about 5 minutes and about 10 hours.

51. The method of claim 37, wherein uniformly doping or alloying each two-element nanowire is performed by uniformly doping each two-element nanowire with the third element with respect to a radial cross section of each two-element nanowire.

52. A uniform nanowire array comprising a plurality of nanowires including at least three elements, each nanowire being uniform with respect to a concentration of the at least three-elements in a radial cross section.

53. The uniform nanowire array of claim 52 wherein uniformity is achieved by controlling a concentration and band-gap of each of the at least three-elements by varying a fabrication parameter selected from a group consisting of temperature, processing time, pH and pressure.

54. The uniform nanowire array of claim 52 wherein the at least three-elements include Zn, O, and Mg.

55. The uniform nanowire array of claim 52 wherein the at least three elements include Zn and O and at least one of a group consisting of Mg, Cd, Mn, Be, Fe, and Co.

56. The uniform nanowire array of claim 52 wherein the at least three elements include Cu and O and at least one of a group consisting of Zn, Mg, Cd, Be, Fe, Mn, and Co.

57. The uniform nanowire array of claim 52 wherein the at least three elements include Cd and O and at least one of a group consisting of Mg, Zn, Mn, Cu, Be, Fe, and Co.

58. The uniform nanowire array of claim 52 wherein the at least three elements include Mg and O and at least one of a group consisting of Zn, Cd, Mn, Cu, Be, Fe, and Co.

59. The method of claim 52 wherein the at least three elements include Fe and O and at least one of a group consisting of Zn, Cd, Mn, Cu, Mg, Be, and Co.

60. The method of claim 52 wherein the at least three elements include Be and O and at least one of a group consisting of Zn, Cd, Mn, Cu, Fe, Mg, and Co.

61. The method of claim 52 wherein the at least three elements include Mn and O and at least one of a group consisting of Zn, Cd, Cu, Fe, Mg, Be, and Co.

62. A uniform nanowire array, said array produced by the process of:

a) growing a uniform array of two-element nanowires;

b) mixing a solution of chemical precursors including at least one doping element and a base;

c) disposing the array of two-element nanowires in the solution; and

d) heating the disposed array of two-element nanowires in a manner uniformly doping or alloying the array of two-element nanowires with the at least one doping or alloying element, to form a uniform array of at least three-element nanowires.

63. The uniform nanowire array of claim 62 wherein growing the array of two-element nanowires further includes uniformly varying a characteristic of each two-element nanowire, the characteristic being at least one of a group consisting of physical dimensions, processing time, temperature, packing density, energy, band-gap and composition of each two-element nanowire.

64. The uniform nanowire array of claim 62 wherein growing the array of two-element nanowires includes a seeded growing of the array of two-element nanowires.

65. The uniform nanowire array of claim 62 wherein growing the array of two-element nanowires further includes performing a hydrothermal or solvathermal synthesis.

66. The uniform nanowire array of claim 62 wherein uniformly doping or alloying each two-element nanowire further includes uniformly controlling concentration and band-gap of each at least three-element nanowire by varying a fabrication parameter selected from a group consisting of temperature, processing time, pH and pressure.

67. The uniform nanowire array of claim 62 wherein heating is performed at a temperature of less than 300°

C.

68. The uniform nanowire array of claim 67 wherein heating is performed at a temperature in a range of between about 100°

C. and about 200°

C.

69. The uniform nanowire array of claim 62 wherein the two-element nanowire comprises Zn and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Cd, Mn, Cu, Be, Fe, and Co.

70. The uniform nanowire array of claim 62 wherein the two-element nanowire comprises Cu and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Mg, Cd, Be, Fe, Mn, and Co.

71. The uniform nanowire array of claim 62 wherein the two-element nanowire comprises Cd and O and the at least one doping or alloying element is at least one of a group consisting of Mg, Zn, Mn, Cu, Be, Fe, and Co.

72. The uniform nanowire array of claim 62 wherein the two-element nanowire comprises Mg and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Be, Fe, and Co.

73. The method of claim 62 wherein the two-element nanowire comprises Fe and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Mg, Be, and Co.

74. The method of claim 62 wherein the two-element nanowire comprises Be and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Mn, Cu, Fe, Mg, and Co.

75. The method of claim 62 wherein the two-element nanowire comprises Mn and O and the at least one doping or alloying element is at least one of a group consisting of Zn, Cd, Cu, Fe, Mg, Be, and Co.

76. The uniform nanowire array of claim 62 further including the step of annealing the uniform nanowire array.

77. The uniform nanowire array of claim 76 further including annealing the uniform nanowire array at a temperature in a range of between about 200°

C. and about 1000°

C., for a time period in a range of between about 5 minutes and about 10 hours.

78. The uniform nanowire array of claim 62 wherein uniformly doping each two-element nanowire is performed by uniformly doping or alloying each two-element nanowire with the doping element with respect to a radial cross section of each two-element nanowire.

79. A solar cell device comprising at least one layer including a uniform three-element nanowire array having uniform three-element nanowires with respect to each other nanowire in terms of chemical composition.

80. The solar cell device of claim 79 wherein the elements include Zn, O and Mg.

81. An electronic device comprising a plurality of nanowires defining a junction of the device, each nanowire including a uniform concentration of at least three elements.

82. The electronic device of claim 81, further including leads configured to carry electrons to or from the junction to enable the electronic device to convert electrons to photons or photons to electrons.

83. The electronic device of claim 81 wherein the three elements include Zn, O and Mg.

84. The electronic device of claim 81 wherein the device is an optoelectronic device.