SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor device comprising:
- a gate electrode over an insulating surface;
an oxide semiconductor layer containing at least zinc and SiOx; and
an insulating layer between the gate electrode and the oxide semiconductor layer,wherein a concentration of silicon in a film thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from the gate electrode.
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Abstract
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a gate electrode over an insulating surface; an oxide semiconductor layer containing at least zinc and SiOx; and an insulating layer between the gate electrode and the oxide semiconductor layer, wherein a concentration of silicon in a film thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode over an insulating surface; an insulating layer over the gate electrode; a first oxide semiconductor layer over the insulating layer; and a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer containing at least zinc and SiOx, wherein a concentration of silicon in the second oxide semiconductor layer is larger than a concentration of silicon in the first oxide semiconductor layer. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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a first oxide semiconductor layer over an insulating surface, the first oxide semiconductor layer containing at least zinc and SiOx; a second oxide semiconductor layer over the first oxide semiconductor layer; an insulating layer over the second oxide semiconductor layer; and a gate electrode over the insulating layer, wherein a concentration of silicon in the first oxide semiconductor layer is larger than a concentration of silicon in the second oxide semiconductor layer. - View Dependent Claims (14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over an insulating surface; forming an insulating layer over the gate electrode; and forming an oxide semiconductor layer over the insulating layer, in which a concentration of a silicon in a film thickness direction increases in accordance with an increase in a distance from the gate electrode, by a sputtering method using a first oxide semiconductor target and by a sputtering method using a second oxide semiconductor target containing SiO2 at from 0.1 wt % to 10 wt % inclusive.
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18. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an insulating surface, in which a silicon in a film thickness direction has a concentration gradient, by a sputtering method using a first oxide semiconductor target containing SiO2 at from 0.1 wt % to 10 wt % inclusive and by a sputtering method using a second oxide semiconductor target; forming an insulating layer covering the oxide semiconductor layer; and forming a gate electrode over the insulating layer, wherein a concentration of silicon in the film thickness direction of the oxide semiconductor layer increases in accordance with an increase in a distance from the gate electrode.
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Specification