LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION
First Claim
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1. A light emitting device comprising:
- a stack of semiconductor layers defining a light-emitting pn junction; and
a dielectric layer disposed over the stack of semiconductor layers, the dielectric layer having a refractive index substantially matching a refractive index of the stack of semiconductor layers, the dielectric layer having a principal surface distal from the stack of semiconductor layers, the distal principal surface including patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
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Abstract
A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
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Citations
37 Claims
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1. A light emitting device comprising:
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a stack of semiconductor layers defining a light-emitting pn junction; and a dielectric layer disposed over the stack of semiconductor layers, the dielectric layer having a refractive index substantially matching a refractive index of the stack of semiconductor layers, the dielectric layer having a principal surface distal from the stack of semiconductor layers, the distal principal surface including patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for fabricating a light emitting device, the method comprising:
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forming a stack of semiconductor layers defining a light-emitting pn junction; and disposing a dielectric layer over the stack of semiconductor layers, the dielectric layer having a refractive index substantially matching a refractive index of the stack of semiconductor layers, the dielectric layer having a principal surface distal from the stack of semiconductor layers, the distal principal surface including patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A light emitting device comprising:
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a stack of semiconductor layers defining a light-emitting pn junction; a host substrate or sub-mount on which is disposed the stack of semiconductor layers, the host substrate or sub-mount being different from a deposition substrate on which the stack of semiconductor layers was formed; and patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers formed on a distal principal surface of the stack of semiconductor layers that is distal from the host substrate or sub-mount. - View Dependent Claims (34)
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35. A method for fabricating a light emitting device, the method comprising:
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forming a stack of semiconductor layers defining a light-emitting pn junction on a deposition substrate; transferring the formed stack of semiconductor layers from the deposition substrate to a host substrate or sub-mount, the transferring exposing a new principal surface of the stack of semiconductor layers that was not exposed when the stack of semiconductor layers was formed on the deposition substrate; and generating patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers on the new principal surface of the stack of semiconductor layers. - View Dependent Claims (36, 37)
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Specification