Semiconductor Device
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of one conductivity type having a plurality of trenches arranged at a predetermined interval from one another;
a plurality of buried electrodes buried in the plurality of trenches respectively; and
a conductor layer inside at least one of the plurality of trenches, the conductor layer being arranged above the buried electrodes with a first insulation film interposed in between so as to be capacitively coupled to the buried electrodes.
1 Assignment
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Accused Products
Abstract
Provided is a semiconductor device having a high switching speed. A semiconductor device (20) is provided with an n-type epitaxial layer (2) having a plurality of trenches (3) arranged at prescribed intervals (b); an embedded electrode (5) formed on an inner surface of the trench (3) through a silicon oxide film (4) to embed each trench (3); and a metal layer (7), which is capacitively coupled with the embedded electrode (5) by being arranged above the embedded electrode (5) through a silicon oxide film (6). In the semiconductor device (20), a region between the adjacent trenches (3) operates as a channel (current path)(11). A current flowing in the channel (11) is interrupted by covering the region with a depletion layer formed at the periphery of the trenches (3), and the current is permitted to flow through the channel (11) by eliminating the depletion layer at the periphery of the trenches (3).
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Citations
24 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of one conductivity type having a plurality of trenches arranged at a predetermined interval from one another; a plurality of buried electrodes buried in the plurality of trenches respectively; and a conductor layer inside at least one of the plurality of trenches, the conductor layer being arranged above the buried electrodes with a first insulation film interposed in between so as to be capacitively coupled to the buried electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor layer of one conductivity type having a plurality of trenches arranged at a predetermined interval from one another; a plurality of buried electrodes buried inside the plurality of trenches; and a capacitor in a predetermined region on the semiconductor layer with an insulation/separation layer interposed in between, the capacitor at least including a fourth insulation film, a first electrode, and a second electrode, the fourth insulation film being disposed laid between the first and second electrodes, wherein the capacitor and the buried electrodes are electrically connected together, and, during operation, a voltage is applied to the buried electrodes via the capacitor. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification