Magnetic Memory Device
First Claim
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1. A magnetic memory device comprising:
- a magnetic tunnel junction (MTJ) structure including a free layer on a semiconductor substrate; and
an electrode formed of silicon-germanium on the semiconductor substrate,wherein the electrode heats the free layer to reduce a coercive force of the free layer for reducing a critical current density.
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Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
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Citations
10 Claims
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1. A magnetic memory device comprising:
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a magnetic tunnel junction (MTJ) structure including a free layer on a semiconductor substrate; and an electrode formed of silicon-germanium on the semiconductor substrate, wherein the electrode heats the free layer to reduce a coercive force of the free layer for reducing a critical current density. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification