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Magnetic Memory Device

  • US 20100181633A1
  • Filed: 01/12/2010
  • Published: 07/22/2010
  • Est. Priority Date: 01/21/2009
  • Status: Active Grant
First Claim
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1. A magnetic memory device comprising:

  • a magnetic tunnel junction (MTJ) structure including a free layer on a semiconductor substrate; and

    an electrode formed of silicon-germanium on the semiconductor substrate,wherein the electrode heats the free layer to reduce a coercive force of the free layer for reducing a critical current density.

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