MECHANICAL RESONATING STRUCTURES INCLUDING A TEMPERATURE COMPENSATION STRUCTURE

• US 20100182102A1
• Filed: 12/16/2009
• Published: 07/22/2010
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Sand9, Inc.
• Inventors: Kuypers, Jan H., Zolfagharkhani, Guiti, Gaidarzhy, Alexei, Chen, David M.
• Granted Patent: US 8,058,769 B2
• Time in Patent Office: Days
• US Class Current: 333/197
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/02228 Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H03H 9/02834 of temperature influence cut angles H03H9/02543

Abstract

Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Claims

1. A device comprising:

a mechanical resonating structure including;

an active layer; and

a compensating structure coupled to the active layer, the compensating structure comprising

a first layer having a stiffness that increases with increasing temperature over at least a first temperature range,

a third layer having a stiffness that increases with increasing temperature over at least the first temperature range, and

a second layer between the first layer and the third layer.

2. The device of claim 1, wherein the active layer comprises a piezoelectric material.

3. The device of claim 2, wherein the piezoelectric material is aluminum nitride.

4. The device of claim 1, wherein the compensating structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency (TCF) having an absolute value of less than 10 ppm/K over a second temperature range from approximately −

40°

C. to approximately 85°

C.

5. The device of claim 4, wherein the TCF has an absolute value of less than 3 ppm/K over the second temperature range.

6. The device of claim 4, wherein the TCF has an absolute value of less than 2 ppm/K over the second temperature range.

7. The device of claim 4, wherein the TCF has an absolute value of less than 1 ppm/K over the second temperature range.

8. The device of claim 4, wherein the TCF is approximately 0 ppm/K over a range of at least 5°

C. within the second temperature range.

9. The device of claim 1, wherein the compensating structure is configured to provide the mechanical resonating structure with a TCF having an absolute value of less than 4 ppm/K over a second temperature range spanning at least 40°

C. and centered approximately at 25°

C.

10. The device of claim 9, wherein the absolute value of the TCF is less than 1 ppm/K.

11. The device of claim 9, wherein the absolute value of the TCF is less than 0.5 ppm/K.

12. The device of claim 1, wherein the mechanical resonating structure is configured to support Lamb waves.

13. The device of claim 12, wherein the active layer comprises aluminum nitride.

14. The device of claim 1, wherein the first layer and the third layer of the compensating structure are formed of a first material.

15. The device of claim 1, wherein the first layer and the third layer of the compensating structure have approximately the same thickness as each other.

16. The device of claim 1, wherein the first layer of the compensating structure is formed of a first material and wherein the second layer is formed of a second material different from the first material.

17. The device of claim 16, wherein the first material is silicon dioxide and the second material is silicon, and wherein a ratio of a total thickness of one or more layers of the mechanical resonating structure comprising the first material to a total thickness of one or more layers of the mechanical resonating structure comprising the second material is between 1:

0.75 and 1;

2.

18. The device of claim 16, wherein a ratio of a total thickness of one or more layers of the mechanical resonating structure comprising the first material to a thickness of the active layer is between 1:

0.1 and 1;

1.25.

19. The device of claim 16, wherein a ratio of a total thickness of one or more layers of the mechanical resonating structure comprising the first material to a thickness of the active layer is between 1:

0.2 and 1;

0.75.

20. The device of claim 1, wherein the first layer is formed of silicon dioxide.

21. The device of claim 1, wherein the second layer is formed of a material selected from the group consisting of silicon, silicon carbide, sapphire, quartz, germanium, gallium arsenide, aluminum nitride and diamond.

22. The device of claim 1, wherein the second layer is formed of silicon.

23. The device of claim 1, wherein the first temperature range spans at least 100°

C.

24. The device of claim 1, wherein the first temperature range spans at least 200°

C.

25. The device of claim 1, wherein the first temperature range is between −

55°

C. and 150°

C.

26. The device of claim 1, wherein the first temperature range is between −

40°

C. and 85°

C.

27. The device of claim 1, wherein the active layer is formed of silicon.

28. The device of claim 1, wherein the active layer is formed on the compensating structure.

29. A device comprising:

a mechanical resonating structure comprising an active layer and a compensation structure coupled to the active layer and configured to compensate temperature-induced variations in stiffness of at least the active layer, the compensation structure comprising a first layer, a second layer, and a third layer, wherein the first and third layers are formed of a first material and wherein the second layer is formed of a second material different than the first material, and wherein the second layer is disposed between the first layer and the second layer.

30. The device of claim 29, wherein the active layer is formed of aluminum nitride, the first material is formed of silicon dioxide, and the second material is formed of silicon.

31. The device of claim 29, wherein the mechanical resonating structure further comprises an electrode layer coupled to the active layer, and wherein the compensation structure is further configured to compensate temperature-induced variations in stiffness of the electrode layer.

32. The device of claim 31, wherein the first and third layers of the compensation structure are configured to compensate for temperature-induced variations in stiffness of the active layer, the electrode layer, and the second layer.

33. The device of claim 31, wherein the mechanical resonating structure is configured to support Lamb waves, and wherein the compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency (TCF) having an absolute value of less than 6 ppm/K over a temperature range spanning at least from approximately −

40°

C. to approximately 85°

C.