OPTICAL DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20100183042A1
• Filed: 01/19/2010
• Published: 07/22/2010
• Est. Priority Date: 01/16/2009
• Status: Abandoned Application

• Current Assignee: National Central University
• Original Assignee: National Central University
• Inventors: Yang, Shih-Pu, Chang, Jenq-Yang, Lee, Yun-Chih, Wu, Mount-Learn
• Application Number:
  US12/689,492
• Publication Number:
  US 20100183042A1
• Time in Patent Office: Days
• US Class Current: 372/45.12
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01S 5/10 Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence
• CPC Class Codes: H01S 5/187 using Bragg reflection

Abstract

An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second type semiconductor layer has a first surface and a second surface. The first surface is in contact with the luminous layer. A rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer.

Claims

1. An optical diode structure, comprising:

a semiconductor substrate;

a luminous layer disposed over the semiconductor substrate for emitting light;

a first type semiconductor layer formed between the semiconductor substrate and the luminous layer; and

a second type semiconductor layer having a first surface and a second surface, wherein the first surface is in contact with the luminous layer, and a rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer.

2. The optical diode structure according to claim 1 wherein the optical diode structure is a light emitting diode structure or a laser diode structure.

3. The optical diode structure according to claim 1 wherein the semiconductor substrate is a sapphire semiconductor substrate or a silicon wafer semiconductor substrate with any lattice orientation.

4. The optical diode structure according to claim 1 wherein each the first type semiconductor layer, the second type semiconductor layer and the luminous layer is made of a semiconductor material selected from aluminum nitride, gallium nitride, indium nitride or indium gallium nitride.

5. The optical diode structure according to claim 1 further comprising:

a reflective layer arranged between the semiconductor substrate and the first type semiconductor layer, wherein the reflective layer is made of a highly reflective metallic material selected from aluminum, silver or aluminum-silver alloy;

a first electrode formed on the first type semiconductor layer and electrically connected to a first electrode of an external circuit; and

a second electrode formed on the second type semiconductor layer and electrically connected to a second electrode of the external circuit.

6. The optical diode structure according to claim 5 wherein the first type semiconductor layer is a P-type semiconductor layer, the first electrode of the optical diode structure and the first electrode of the external circuit are anode electrodes, the second type semiconductor layer is an N-type semiconductor layer, and the second electrode of the optical diode structure and the second electrode of the external circuit are cathode electrodes.

7. The optical diode structure according to claim 5 wherein the first type semiconductor layer is an N-type semiconductor layer, the first electrode of the optical diode structure and the first electrode of the external circuit are cathode electrodes, the second type semiconductor layer is a P-type semiconductor layer, the second electrode of the optical diode structure and the second electrode of the external circuit are anode electrodes.

8. The optical diode structure according to claim 1 wherein the luminous layer has a multi-quantum well structure.

9. The optical diode structure according to claim 1 wherein the rough-surfaced grating structure is a trapezoid-shaped structure having a top surface and a bottom surface, and the area of the top surface is smaller than that of the bottom surface.

10. A process of manufacturing an optical diode structure, the process comprising steps:

providing a semiconductor substrate;

forming a luminous structure over the semiconductor substrate;

forming a roughening region in the luminous structure; and

performing a photolithography and etching procedure on the luminous structure, thereby forming a rough-surfaced grating structure in the roughening region of the luminous structure.

11. The process according to claim 10 wherein the semiconductor substrate is a sapphire semiconductor substrate or a silicon wafer semiconductor substrate with any lattice orientation.

12. The process according to claim 10 wherein each the first type semiconductor layer, the second type semiconductor layer and the luminous layer is made of a semiconductor material selected from aluminum nitride, gallium nitride, indium nitride or indium gallium nitride.

13. The process according to claim 10 wherein the luminous structure is formed over the semiconductor substrate according to a metal organic chemical vapor deposition procedure, which comprises steps of:

forming a first type semiconductor layer on the semiconductor substrate;

forming a luminous layer on the first type semiconductor layer; and

forming a second type semiconductor layer on the luminous layer, thereby producing the luminous structure.

14. The process according to claim 13, further comprising steps of:

forming a reflective layer between the semiconductor substrate and the first type semiconductor layer, wherein the reflective layer is made of a highly reflective metallic material selected from aluminum, silver or aluminum-silver alloy;

forming a first electrode on the first type semiconductor layer; and

forming a second electrode on the second type semiconductor layer.

15. The process according to claim 14 wherein the first type semiconductor layer is a P-type semiconductor layer, the first electrode of the optical diode structure is an anode electrode, the second type semiconductor layer is an N-type semiconductor layer, and the second electrode of the optical diode structure is a cathode electrode.

16. The process according to claim 14 wherein the first type semiconductor layer is an N-type semiconductor layer, the first electrode of the optical diode structure is a cathode electrode, the second type semiconductor layer is a P-type semiconductor layer, and the second electrode of the optical diode structure is an anode electrode.

17. The process according to claim 13 wherein the roughening region is formed in the luminous structure by a wet etching procedure.

18. The process according to claim 13 wherein the roughening region is formed on the luminous structure during the metal organic chemical vapor deposition procedure.

19. The process according to claim 10 wherein the photolithography and etching procedure comprises steps of:

forming a photoresist layer on the roughening region of the luminous structure;

defining a photoresist pattern on the photoresist layer by a photomask; and

performing a dry etching procedure on the luminous structure according to the photoresist pattern, thereby producing the rough-surfaced grating structure in the roughening region of the luminous structure

20. The process according to claim 10 wherein the rough-surfaced grating structure is a trapezoid-shaped structure having a top surface and a bottom surface, and the area of the top surface is smaller than that of the bottom surface.