INFRARED CURING PROCESS FOR TOUCH PANEL MANUFACTURING

• US 20100183823A1
• Filed: 07/02/2008
• Published: 07/22/2010
• Est. Priority Date: 07/03/2007
• Status: Active Grant

• Current Assignee: TPK Touch Solutions (Xiamen) Inc. (TPK Holding Co., Ltd.)
• Original Assignee: Donnelly Corporation (Magna International Incorporated)
• Inventors: Getz, Catherine A.
• Granted Patent: US 8,609,201 B2
• Time in Patent Office: Days
• US Class Current: 427/557
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/3644 the metal being silver
• CPC Class Codes: C03C 17/3655 the multilayer coating containing at least one conducting layer
• CPC Class Codes: C03C 17/3671 specially adapted for use as electrodes
• CPC Class Codes: C03C 2217/948 Layers comprising indium tin oxide [ITO]
• CPC Class Codes: C03C 2218/322 Oxidation
• CPC Class Codes: C03C 23/001 by infrared light

Abstract

An infrared energy oxidizing and/or curing process includes an infrared oxidation zone having an infrared energy source operable to emit infrared energy that oxidizes a conductive thin film deposited or established on a glass substrate to establish a light transmissive or transparent conductive thin film for manufacturing of a touch panel. Optionally, the infrared energy curing process provides an in-line infrared energy curing process that oxidizes the conductive thin film on the glass substrate as the glass substrate is moved past the infrared energy source. Optionally, the infrared energy curing process bonds a thick film silver frit electrode pattern to the conductively coated glass substrate. Optionally, the infrared energy curing process reduces the transparent conductive thin film.

Claims

1. A method of processing a substrate for a touch panel utilizing infrared energy, said method comprising:

providing an infrared energy source operable to emit infrared energy;

providing a glass substrate with a conductive thin film disposed on a surface of said glass substrate; and

oxidizing said conductive thin film via operation of said infrared energy source to establish a transmissivity property of said conductive thin film for manufacturing of a computer touch panel.

2. The method of claim 1, wherein said infrared energy source is incorporated in an in-line infrared energy curing process that oxidizes said conductive thin film on said glass substrate as said glass substrate is moved past said infrared energy source.

3. The method of claim 1, wherein oxidizing said conductive thin film comprises oxidizing said conductive thin film to establish a substantially transparent property of said conductive thin film.

4. The method of claim 1, wherein oxidizing said conductive thin film comprises oxidizing said conductive thin film to establish a selected conductivity property of said conductive thin film.

5. The method of claim 1, wherein said conductive thin film comprises indium tin oxide.

6. The method of claim 1, wherein said infrared energy source is operable to bond a thick film silver frit electrode pattern to said conductive thin film coated glass substrate.

7. The method of claim 6, wherein said infrared energy source is operable to reduce said transparent conductive thin film.

8. The method of claim 1, wherein said infrared energy is operable to reduce said transparent conductive thin film.

9. A method of processing a substrate for a touch panel utilizing infrared energy, said method comprising:

providing an infrared energy source operable to emit infrared energy;

providing a glass substrate coated with a conductive thin film on a surface of said glass substrate; and

wherein said infrared energy source at least one of (a) oxidizes said conductive thin film as said glass substrate is moved past said infrared energy source to establish a transparent conductive thin film for manufacturing of a computer touch panel;

(b) bonds a thick film silver fit electrode pattern to said conductively coated glass substrate as said glass substrate is moved past said infrared energy source; and

(c) reduces said transparent conductive thin film as said glass substrate is moved past said infrared energy source.

10. The method of claim 9, wherein said conductive thin film comprises indium tin oxide.