PLASMA ATOMIC LAYER DEPOSITION SYSTEM AND METHOD

• US 20100183825A1
• Filed: 12/28/2009
• Published: 07/22/2010
• Est. Priority Date: 12/31/2008
• Status: Abandoned Application

• Current Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Original Assignee: Cambridge NanoTech Incorporated (Veeco Instruments Incorporated)
• Inventors: Becker, Jill S., Coutu, Roger R., Monsma, Douwe J.
• Application Number:
  US12/647,821
• Publication Number:
  US 20100183825A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45504 Laminar flow
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45555 applied in non-semiconductor technology
• CPC Class Codes: C23C 16/45582 Expansion of gas before it reaches the substrate
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally

Abstract

An improved gas deposition chamber includes a hollow gas deposition volume formed with a volume expanding top portion and a substantially constant volume cylindrical middle portion. The hollow gas deposition volume may include a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside gas deposition chamber with a substrate support surface positioned in the constant volume cylindrical middle portion. The volume expanding top portion reduces gas flow velocity between gas input ports and the substrate support surface. The aerodynamic shape of the substrate support chuck reduces drag and helps to promote laminar flow over the substrate support surface. The volume reducing lower portion helps to increase gas flow velocity after the gas has past the substrate support surface. The improved gas deposition chamber is configurable to 200 mm diameter semiconductor wafers using ALD and or PALD coating cycles. An improved coating method includes expanding process gases inside the deposition chamber prior to the process gas reaching surfaces of a substrate being coated. The method further includes compressing the process gases inside the deposition chamber after the process gas has flowed past surfaces of the substrate being coated.

Claims

1. A gas deposition chamber for depositing solid material layers onto substrates supported therein comprising:

an external chamber wall disposed along a longitudinal axis and formed to surround a hollow gas deposition volume comprising a volume expanding top portion and a substantially constant volume cylindrical middle portion;

a top circular aperture axially centered by the longitudinal axis for providing access to the volume expanding top portion and a plasma source flange surrounding the top circular aperture;

a substrate support chuck comprising a circular substrate support surface supported inside the cylindrical middle portion of the hollow gas deposition volume with the circular substrate support surface axially centered by and substantially orthogonal to the longitudinal axis;

a bottom circular aperture axially centered by the longitudinal axis for providing access to the cylindrical middle portion of the hollow gas deposition volume wherein the external chamber wall includes a trap flange surrounding the bottom circular aperture and further wherein a diameter of the bottom circular aperture is larger than a diameter of the circular substrate support surface;

a load port aperture passing through the external chamber wall to the cylindrical middle portion; and

,

a precursor input port passing through the external chamber wall proximate to the top circular aperture for delivering a gas flow into the volume expanding top portion of the hollow gas deposition volume.

2. The gas deposition chamber of claim 1 further comprising at least one heating element disposed to heat the circular substrate support surface to a gas deposition temperature.

3. The gas deposition chamber of claim 2 wherein the substrate support chuck further comprises an aerodynamically formed outer shell attached to the circular substrate support surface for reducing aerodynamic drag of the substrate support chuck.

4. The gas deposition chamber of claim 3 wherein the aerodynamically formed outer shell comprises a hemispherical shell with an axial center that is substantially coaxial with the axial center of the circular substrate support surface.

5. The gas deposition chamber of claim 3 wherein the aerodynamically formed outer shell comprises a parabolic shell with a parabolic focus that is substantially coaxial with the axial center of the circular substrate support surface.

6. The gas deposition chamber of claim 3 wherein the aerodynamically formed outer shell comprises a right circular cone with an axis that is substantially coincident with the axial center of the circular substrate support surface.

7. The gas deposition chamber of claim 3 wherein a circumferential edge of the circular substrate support surface is formed with a radius to reduce aerodynamic drag of the substrate support chuck.

8. The gas deposition chamber of claim 7 further comprising two or more hollow tubes fixedly attached to the outer shell and to a support structure and extending from inside the outer shell to outside the external chamber wall for fixedly supporting the substrate support chuck inside the middle portion of the hollow gas deposition volume and for providing at least one conduit that extends form outside the hollow gas deposition volume to inside the outer shell.

9. The gas deposition chamber of claim 1 wherein the substrate support chuck further comprises:

a substrate support element movable with respect to the circular substrate support surface for separating the substrate from the substrate support surface and for supporting the substrate vertically separated from the substrate support surface; and

,

a lifting mechanism attached to the substrate support element and housed inside the substrate support chuck for raising and lowering the substrate support element with respect to the substrate support surface in response to electrical commands.

10. The gas deposition chamber of claim 1 further comprising a load port attached to the external chamber wall surrounding the load port aperture and a load port gate attached to the load port, wherein the load port gate can be opened to pass a substrate through the load port and the load port aperture and the load port gate can be closed to gas seal the load port.

11. The gas deposition chamber of claim 9 further comprising:

a load port attached to the external chamber wall surrounding the load port aperture;

a load port gate attached to the load port wherein the load port gate can be opened to pass a substrate through

the load port and the load port aperture and the load port gate can be closed to gas seal the load port;

a load port aperture cover movably disposed inside the load port for covering the load port aperture when the load port gate is closed; and

,

a shuttle mechanism for moving the load port cover to a first position to uncover the load port when the load port gate is opened and to a second position to cover the load port when the load port gate is closed.

12. The gas deposition chamber of claim 11 further comprising an inert gas inlet port passing through the load port for delivering inert gas into the load port between the load port aperture cover and the load port gate.

13. The gas deposition chamber of claim 1 wherein the external chamber wall surrounding the volume expanding top portion comprises a truncated one-sheet hyperboloid of revolution having a center coincident with the longitudinal axis and having a transverse axis coplanar with the top circular aperture.

14. The gas deposition chamber of claim 1 wherein the external chamber wall surrounding the volume expanding top portion is formed with a constant radius (R).

15. The gas deposition chamber of claim 1 wherein the external chamber wall surrounding the volume expanding top portion comprises a truncated cone formed with an axial center coaxial with the longitudinal axis.

16. The gas deposition chamber of claim 1 wherein the precursor input port is disposed to delivers the gas flow along an axis that is rotated 45-degree angle with respect to the longitudinal axis.

17. The gas deposition chamber of claim 16 further comprising a plasma source attached to the plasma flange for delivering charged plasma gases into the hollow gas deposition chamber through the top circular aperture.

18. The gas deposition chamber of claim 17 further comprising a trap assembly attached to the trap flange for trapping selected components of outflow gases exiting through the bottom circular aperture.

19. The gas deposition chamber of claim 18 further comprising a vacuum pump fluidly interconnected with an exit port of the trap assembly for drawing outflow gas from the hollow gas deposition chamber through the trap assembly.

20. The gas deposition chamber of claim 19 further comprising a stop valve disposed between the vacuum pump and the trap assembly.

21. The gas deposition chamber of claim 20 further comprising heating elements disposed to heat the external chamber wall to a desired operating temperature.

22. The gas deposition chamber of claim 21 further comprising a load lock chamber connected to the load port and a load port gate associated with the load lock chamber.

23. The gas deposition chamber of claim 1 wherein the middle cylindrical portion comprises a cylindrical ring portion and the external chamber wall is shaped to form a volume reducing lower portion of the gas deposition chamber that extends from the cylindrical ring portion to the bottom circular aperture.

24. A method for coating a substrate with a solid material layer comprising the steps of:

supporting the substrate on substrate support surface disposed in a substantially constant volume middle portion of a hollow gas deposition volume;

introducing a first process gas into a volume expanding top portion of the hollow gas deposition volume and allowing the first process gas to expand in volume prior to impinging surfaces of the substrate;

drawing the process gas out of the hollow deposition chamber through a exit port wherein the exit port is positioned opposed to the volume expanding top portion of the hollow gas deposition volume;

removing substantially all of the first process gas from the hollow gas deposition volume while delivering an flow of inert gas into the hollow gas deposition volume;

introducing a second process gas into the volume expanding top portion of the hollow gas deposition volume and allowing the second process gas to expand in volume prior to impinging surfaces of the substrate; and

,

removing substantially all of the second process gas from the hollow gas deposition volume while delivering an flow of inert gas into the hollow gas deposition volume.

25. The method of claim 24 wherein one of the first and the second process gases comprises a charged plasma gas.

26. The method of claim 25 wherein another of the first and the second process gases comprises a precursor gas.

27. The method of claim 26 wherein the hollow gas deposition volume further comprising a volume reducing bottom portion reducing the volume of the hollow deposition chamber between the substantially constant volume middle portion and the exit port further comprising step of reducing the volume of each of the first and the second process gasses as they pass between the substrate support surface and the exit port.

28. The method of claim 27 further comprising the step of preventing eddy current formation proximate to the substrate support surface by forming the substrate surface on a drag reducing aerodynamically shaped substrate support chuck.

29. A gas deposition system having a front face and a plurality of non-front faces comprising:

a frame for supporting elements of the gas deposition system;

a first gas deposition chamber supported on the frame comprising an external chamber wall disposed along a longitudinal axis and formed to surround a hollow gas deposition volume comprising a volume expanding top portion and a substantially constant volume cylindrical middle portion;

a first aerodynamically shaped substrate support chuck disposed inside the first gas deposition chamber for supporting a first substrate in the substantially constant volume cylindrical middle portion;

a first substrate load port aperture passing through the external chamber wall of the first gas deposition chamber for providing access for loading the first substrate onto the first substrate support surface; and

,

a gas panel, a vacuum system and an electronic controller and associated user interface each supported on the frame and interfaced with the first gas deposition chamber for performing gas deposition cycles suitable for coating surfaces of the first substrate.

30. The gas deposition chamber of claim 29 further comprising:

a second substantially identical gas deposition chamber supported on the frame;

a second substantially identical aerodynamically shaped substrate support chuck disposed inside the second gas deposition chamber for supporting a second substrate thereon

a second substrate load port aperture passing through the external chamber wall of the second gas deposition chamber from the front face for providing access for loading the second substrate onto the second substrate support surface; and

,

wherein the gas panel, the vacuum system and the electronic controller are interfaced with the second gas deposition chamber for performing gas deposition cycles suitable for coating surfaces of the second substrate simultaneously and independently from performing gas deposition cycles suitable for coating exposed surfaces of the first substrate.

31. The gas deposition system of claim 29 wherein the user interface is accessible from a face other than the front face.

32. The gas deposition system of claim 29 wherein the user interface is accessible the front face.

33. The gas deposition system of claim 30 wherein the user interface comprises an independent user interface associated with each of the first and the second deposition chamber.

34. The gas disposition system of claim 33 further comprising one or more service interfaces in communication with the electronic controller and for independently performing service operations.

35. The gas deposition system of claim 29 further comprising:

a load lock vacuum chamber supported on the frame and a load lock gate that can be opened to load a substrate into the load lock port and closed to gas seal the load lock chamber;

a load port extending between the load lock vacuum chamber and the first substrate load port aperture;

a gate valve disposed in the load port for alternately opening the load port and gas sealing the load port;

a substrate holder movable between the load lock chamber and the first gas deposition chamber for advancing a substrate form the load lock chamber to the first gas deposition chamber.