Creation and Translation of Low-Relieff Texture for a Photovoltaic Cell
First Claim
1. A method to form texture at a surface of a photovoltaic cell, the method comprising the steps of:
- applying a mixture containing glass frit to a first surface of a silicon body;
firing the glass frit mixture, causing selective etching of silicon at the first surface;
removing all of the fired glass frit, leaving the first surface textured; and
fabricating the photovoltaic cell, wherein the photovoltaic cell comprises the textured first surface.
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Accused Products
Abstract
Low-relief texture can be created by applying and firing frit paste on a silicon surface. Where frit contacts the surface at high temperature, it etches silicon, dissolving silicon in the softened glass frit. The result is a series of small, randomly located pits, which produce a near-Lambertian surface, suitable for use in a photovoltaic cell. This texturing method consumes little silicon, and is advantageously used in a photovoltaic cell in which a thin silicon lamina comprises the base region of the cell. When the lamina is formed by implanting ions in a donor wafer to form a cleave plane and cleaving the lamina from the donor wafer at the cleave plane, the ion implantation step will serve to translate texture formed at a first surface to the cleave plane, and thus to the second, opposing surface following cleaving. Low-relief texture formed by other methods can be translated from the first surface to the second surface in this way as well.
81 Citations
21 Claims
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1. A method to form texture at a surface of a photovoltaic cell, the method comprising the steps of:
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applying a mixture containing glass frit to a first surface of a silicon body; firing the glass frit mixture, causing selective etching of silicon at the first surface; removing all of the fired glass frit, leaving the first surface textured; and fabricating the photovoltaic cell, wherein the photovoltaic cell comprises the textured first surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method to texture opposing surfaces of a lamina, the method comprising the steps of:
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creating a first texture at a first surface of a donor body, wherein, for at least 50 percent of the area of the first surface, average peak-to-valley height is between about 100 nm and about 1500 nm, and average peak-to-peak distance is between about 140 nm and about 2100 nm; implanting ions through the textured first surface, thereby defining a cleave plane within the donor body; and cleaving the lamina from the donor body at the cleave plane, wherein the first surface of the donor body is a first surface of the lamina, and wherein a second surface of the lamina, the second surface opposite the first surface, is created by cleaving, and wherein, immediately following the cleaving step, the second surface has a second texture, wherein for at least 50 percent of the area of the second surface, average peak-to-valley height is between about 100 nm and about 1500 nm, and average peak-to-peak distance is between about 140 nm and about 2100 nm. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification