Method for Manufacturing Semiconductor Device
0 Assignments
0 Petitions
Accused Products
Abstract
An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
-
Citations
30 Claims
-
1-18. -18. (canceled)
-
19. A method for manufacturing a semiconductor device comprising:
-
forming a first semiconductor film over a substrate;
wherein the first semiconductor comprises an oxide semiconductor,irradiating the first semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to form an island-shaped semiconductor film in such a way that a first region in the first semiconductor film which has been irradiated with the laser beam through a region in which the shield in the photomask is not formed is sublimed, and a second region which is not irradiated with the laser beam in the first semiconductor film remains without being sublimed by using a region in which the shield in the photomask is formed as a mask; forming a source electrode and a drain electrode over the island-shaped semiconductor film; forming a gate insulating film over the island-shaped semiconductor film, the source electrode and the drain electrode; and forming a gate electrode over the gate insulating film. - View Dependent Claims (20, 21, 22, 23, 24)
-
-
25. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor film over a substrate;
wherein the semiconductor film comprises an oxide semiconductor,selectively irradiating the semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to remove an irradiated portion of the semiconductor film, thereby, forming an island-shaped semiconductor film; forming a source electrode and a drain electrode over the island-shaped semiconductor film; forming a gate insulating film over the island-shaped semiconductor film, the source electrode and the drain electrode; and forming a gate electrode over the gate insulating film. - View Dependent Claims (26, 27)
-
-
28. A method for manufacturing a semiconductor device comprising:
-
forming a gate electrode and a gate insulating film over a substrate; forming a semiconductor film over the gate insulating film, wherein the semiconductor film comprises an oxide semiconductor, selectively irradiating the semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to remove an irradiated portion of the semiconductor film, thereby, forming an island-shaped semiconductor film; forming an insulating film over the island-shaped semiconductor film; and forming a source electrode and a drain electrode over the insulating film, the source electrode and the drain electrode being electrically connected to the island-shaped semiconductor film. - View Dependent Claims (29, 30)
-
Specification