METHOD FOR TREATING LAYERS OF A GATE STACK

• US 20100184281A1
• Filed: 01/16/2009
• Published: 07/22/2010
• Est. Priority Date: 01/16/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yao, Liang-Gi, Yu, Chen-Hua, Hsu, Yu-Rung
• Granted Patent: US 7,910,467 B2
• Time in Patent Office: Days
• US Class Current: 438/591
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

A method for fabricating a semiconductor device with improved performance is disclosed. The method comprises providing a semiconductor substrate; forming one or more gate stacks having an interfacial layer, a high-k dielectric layer, and a gate layer over the substrate; and performing at least one treatment on the interfacial layer, wherein the treatment comprises a microwave radiation treatment, an ultraviolet radiation treatment, or a combination thereof.

Claims

1. A method for fabricating an integrated circuit, the method comprising:

providing a substrate;

forming an interfacial layer over the substrate;

forming a high-k dielectric layer over the interfacial layer;

forming a gate layer over the high-k dielectric layer;

forming at least one gate stack over the substrate; and

performing a microwave treatment on at least one of the interfacial layer, the high-k dielectric layer and/or the gate layer.

2. The method of claim 1 wherein performing the microwave treatment comprises selectively treating the interfacial layer.

3. The method of claim 2 wherein selectively treating the interfacial layer comprises utilizing a microwave radiation having a frequency of about 90 GHz at a power output of about 1 kW.

4. The method of claim 2 wherein the interfacial layer comprises a chemical oxide.

5. The method of claim 1 wherein performing the microwave treatment comprises selectively treating the high-k dielectric layer.

6. The method of claim 5 wherein selectively treating the high-k dielectric layer comprises utilizing a microwave radiation having a frequency of about 24 GHz at a power output of about 5 kW.

7. The method of claim 1 wherein performing the microwave treatment comprises selectively treating the gate layer.

8. The method of claim 7 wherein selectively treating the gate layer comprises utilizing a microwave radiation having a frequency of about 2.54 GHz at a power output of about 5 kW.

9. A method for fabricating an integrated circuit, the method comprising:

providing a substrate;

forming an interfacial layer over the substrate;

forming a high-k dielectric layer over the interfacial layer;

forming a gate layer over the high-k dielectric layer;

forming at least one gate stack over the substrate; and

performing a broadband ultraviolet (UV) treatment on at least one of the interfacial layer, the high-k dielectric layer and/or the gate layer.

10. The method of claim 9 wherein performing the broadband UV treatment comprises selectively treating the interfacial layer.

11. The method of claim 10 wherein the interfacial layer comprises a chemical oxide.

12. The method of claim 10 further comprising etching back the interfacial layer over the substrate.

13. The method of claim 12 wherein etching back the interfacial layer over the substrate comprises utilizing an HF vapor etching process.

14. The method of claim 12 wherein etching back the interfacial layer over the substrate comprises etching back the interfacial layer to a thickness ranging from about 4 Å

and about 6 Å

.

15. The method of claim 10 further comprising, in-situ, pre-cleaning the substrate, forming the interfacial layer over the substrate, and selectively treating the interfacial layer.

16. The method of claim 9 wherein performing the broadband UV treatment comprises performing the broadband UV treatment in an ambient comprising oxygen (O₂), argon, nitrogen (N₂), NO, NH₃, and/or combinations thereof.

17. The method of claim 9 wherein performing the broadband UV radiation treatment comprises utilizing an power output ranging from milliwatts to about 5 watts.

18. A method for fabricating an integrated circuit, wherein the integrated circuit comprises one or more gate stacks having an interfacial layer, a high-k dielectric layer, and a gate layer, the method comprising:

providing a semiconductor substrate;

forming the one or more gate stacks having the interfacial layer, the high-k dielectric layer, and the gate layer over the substrate; and

performing at least one treatment on the interfacial layer, wherein the treatment comprises a microwave radiation treatment, an ultraviolet radiation treatment, or a combination thereof.

19. The method of claim 18 wherein forming the interfacial layer comprises performing a pre-gate clean to form a thin chemical oxide layer.

20. The method of claim 18 wherein forming the interfacial layer comprises etching back the interfacial layer over the substrate utilizing an HF vapor etching process.