Micro-heaters and methods for manufacturing the same

• US 20100187220A1
• Filed: 04/03/2009
• Published: 07/29/2010
• Est. Priority Date: 01/23/2009
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Zoulkarneev, Andrei, Choi, Junhee
• Application Number:
  US12/385,285
• Publication Number:
  US 20100187220A1
• Time in Patent Office: Days
• US Class Current: 219/543
• CPC Class Codes: H01C 17/02 adapted for manufacturing resistors with envelope or housing
• CPC Class Codes: H01C 17/0652 containing carbon or carbides
• CPC Class Codes: H01C 17/06526 composed of metals
• CPC Class Codes: H05B 3/283 the insulating material being an inorganic material, e.g. ceramic
• CPC Class Codes: Y10T 29/49083 Heater type
• CPC Class Codes: Y10T 29/49087 with envelope or housing
• CPC Class Codes: Y10T 29/49099 Coating resistive material on a base

Abstract

A micro-heater according to example embodiments may include a substrate, a metal pattern, and a passivation layer. The metal pattern may be spaced apart from the substrate. The passivation layer may be on the metal pattern and made of a solid solution including a material constituting the metal pattern. Alternatively, the passivation layer may be on the substrate and the metal pattern. A method for manufacturing a micro-heater according to example embodiments may include arranging a metal pattern so as to be spaced apart from a substrate. A first passivation layer may be formed on the substrate and the metal pattern. A voltage may be applied to the metal pattern to heat the metal pattern. As a result, a material constituting the metal pattern may diffuse into the first passivation layer to form a second passivation layer.

Claims

1. A micro-heater comprising:

a substrate;

a metal pattern spaced apart from the substrate; and

a passivation layer on the metal pattern.

2. The micro-heater according to claim 1, wherein the passivation layer is a solid solution that includes a material constituting the metal pattern.

3. The micro-heater according to claim 2, wherein the solid solution further includes silicon, titanium, or tin.

4. The micro-heater according to claim 1, wherein the passivation layer includes amorphous silicon, silicon oxide, silicon oxynitride, silicon carbide, titanium nitride, or indium tin oxide.

5. The micro-heater according to claim 4, wherein the silicon oxide or silicon oxynitride is expressed by SiO_x (0<

x≦

2) or SiO_xN_y (0<

x≦

2, y>

0), respectively.

6. The micro-heater according to claim 4, wherein the passivation layer further includes phosphorus or boron.

7. The micro-heater according to claim 1, further comprising:

an additional passivation layer on the substrate.

8. The micro-heater according to claim 1, wherein the passivation layer has a thickness of about 100 nm or less.

9. The micro-heater according to claim 1, wherein the metal pattern includes tungsten, molybdenum, or silicon carbide.

10. A method for manufacturing a micro-heater, comprising:

arranging a metal pattern so as to be spaced apart from a substrate; and

forming a first passivation layer on the metal pattern.

11. The method according to claim 10, wherein the first passivation layer is formed by sputtering or chemical vapor deposition.

12. The method according to claim 10, wherein the first passivation layer has a thickness of about 100 nm or less.

13. The method according to claim 10, wherein the first passivation layer is made of a material including amorphous silicon, silicon oxide, silicon oxynitride, silicon carbide, titanium nitride, or indium tin oxide.

14. The method according to claim 13, wherein the silicon oxide or silicon oxynitride is expressed by SiO_x (0<

x≦

2) or SiO_xN_y (0<

x≦

2, y>

0), respectively.

15. The method according to claim 13, wherein the first passivation layer further includes phosphorus or boron.

16. The method according to claim 10, wherein the metal pattern includes tungsten, molybdenum, or silicon carbide.

17. The method according to claim 10, further comprising:

applying a voltage to the metal pattern to heat the metal pattern; and

diffusing a material constituting the metal pattern into the first passivation layer to form a second passivation layer.

18. The method according to claim 17, wherein the second passivation layer is a solid solution.

19. The method according to claim 17, further comprising:

removing the first passivation layer remaining after the formation of the second passivation layer.

20. The method according to claim 19, wherein the first passivation layer is removed by wet etching.