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MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES

  • US 20100187404A1
  • Filed: 03/19/2010
  • Published: 07/29/2010
  • Est. Priority Date: 04/18/2007
  • Status: Active Grant
First Claim
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1. An image sensor comprising:

  • a semiconductor substrate;

    a plurality of pixel regions, each pixel region comprising an optically sensitive layer over the substrate, the optically sensitive layer positioned to receive light;

    a pixel circuit for each pixel region, each pixel circuit comprising a charge store and a read out circuit, the charge store and the read out circuit in electrical communication with the optically sensitive layer of the respective pixel region; and

    conductive material positioned between the charge store of the respective pixel region and the optically sensitive layer of the corresponding pixel region such that the respective charge store is substantially shielded from the light incident on the optically sensitive layer, wherein the light is in a wavelength band, wherein at least a portion of the conductive material is a metal layer in electrical communication with the optically sensitive layer.

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