SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20100187524A1
• Filed: 03/31/2010
• Published: 07/29/2010
• Est. Priority Date: 04/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ISOBE, Atsuo, TERASAWA, Fumiko, ARAI, Yasuyuki, TAKANO, Tamae
• Granted Patent: US 8,896,049 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/35 with a cell select transistor, e.g. NAND
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

Claims

1. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a floating gate over the first insulating film;

a second insulating film over the floating gate; and

a second conductive layer over the second insulating film,

wherein the semiconductor film includes a compound semiconductor.

2. The semiconductor device according to claim 1, wherein the compound semiconductor comprises InGaZnO.

3. The semiconductor device according to claim 2, wherein InGaZnO is a-InGaZnO.

4. The semiconductor device according to claim 1, wherein the first insulating film has a defect configured to trap a charge in the first insulating film.

5. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive layer over the first insulating film;

a second insulating film over the first conductive layer; and

a second conductive layer over the second insulating film,

wherein the semiconductor film includes InGaZnO.

6. The semiconductor device according to claim 5, wherein InGaZnO is a-InGaZnO.

7. The semiconductor device according to claim 5, wherein the first insulating film is a tunnel insulating film, and

wherein the first insulating film has a defect configured to trap a charge in the first insulating film.

8. A semiconductor device comprising:

a first semiconductor film;

a first insulating film in contact with a top surface of the first semiconductor film;

a second insulating film in contact with a side surface of the first semiconductor film;

a first conductive layer in contact with a top surface of the first insulating film; and

a second conductive layer over the first conductive layer,

wherein the second conductive layer is in contact with a top surface of the second insulating film, and

wherein the first semiconductor film includes a compound semiconductor.

9. The semiconductor device according to claim 8, wherein the compound semiconductor comprises InGaZnO.

10. The semiconductor device according to claim 9, wherein InGaZnO is a-InGaZnO.

11. The semiconductor device according to claim 8, wherein the first insulating film is a tunnel insulating film, and

wherein the first conductive layer is a floating gate.

12. The semiconductor device according to claim 8, further comprising a third insulating film interposed between the first conductive layer and the second conductive layer.

13. The semiconductor device according to claim 8, further comprising a wiring and a transistor including a second semiconductor film,

wherein the second semiconductor film is electrically connected to the first semiconductor film through the wiring.

14. The semiconductor device according to claim 8, further comprising a transistor including a second semiconductor film, wherein the first semiconductor film and the second semiconductor film are same material.

15. The semiconductor device according to claim 8, wherein the second conductive layer is in contact with a top surface of the first conductive layer.

16. A semiconductor device comprising:

a first semiconductor film;

a first insulating film in contact with a top surface of the first semiconductor film;

a second insulating film in contact with a side surface of the first semiconductor film;

a first conductive layer in contact with a top surface of the first insulating film; and

a second conductive layer over the first conductive layer,

wherein the second conductive layer is in contact with a top surface of the second insulating film, and

wherein the first semiconductor film includes InGaZnO.

17. The semiconductor device according to claim 16, wherein InGaZnO is a-InGaZnO.

18. The semiconductor device according to claim 16, wherein the first insulating film is a tunnel insulating film, and

wherein the first conductive layer is a floating gate.

19. The semiconductor device according to claim 16, further comprising a third insulating film interposed between the first conductive layer and the second conductive layer.

20. The semiconductor device according to claim 16, further comprising a wiring and a transistor including a second semiconductor film,

wherein the second semiconductor film is electrically connected to the first semiconductor film through the wiring.

21. The semiconductor device according to claim 16, further comprising a transistor including a second semiconductor film, wherein the first semiconductor film and the second semiconductor film are same material.

22. The semiconductor device according to claim 16, wherein the second conductive layer is in contact with a top surface of the first conductive layer.

23. A semiconductor device comprising:

a first transistor comprising a first semiconductor film, a first insulating film, a second insulating film, a floating gate, and a first conductive layer;

a second transistor comprising a second semiconductor film, a third insulating film, and a second conductive layer;

a first wiring electrically connected to the first conductive layer;

a second wiring electrically connected to the second conductive layer; and

a third wiring electrically connected to the first transistor and the second transistor,

wherein the first insulating film, the floating gate, and the second insulating film are overlapped in this order and are interposed between the first semiconductor film and the first conductive layer,

wherein the third insulating film is interposed between the second semiconductor film and the second conductive layer, and

wherein the second semiconductor film includes a compound semiconductor.

24. The semiconductor device according to claim 23, wherein the compound semiconductor comprises InGaZnO.

25. The semiconductor device according to claim 24, wherein InGaZnO is a-InGaZnO.

26. The semiconductor device according to claim 23,

wherein the first semiconductor film and the second semiconductor film are same material.