SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100187534A1
• Filed: 04/01/2010
• Published: 07/29/2010
• Est. Priority Date: 05/21/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: NISHI, Kazuo, SUGAWARA, Yuusuke, KUSUMOTO, Naoto, MARUYAMA, Junya
• Granted Patent: US 8,258,512 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

Claims

1. A semiconductor device comprising:

a thin film transistor formed adjacent to a first substrate;

a photoelectric conversion element formed adjacent to a second substrate; and

an adhesion bond and conductive particles sandwiched between the first substrate and the second substrate which are opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates;

wherein the thin film transistor and the photoelectric conversion element are connected electrically through the conductive particles.

2. The semiconductor device according to claim 1,

wherein the adhesion bond comprises an anisotropic conductive adhesion bond.

3. The semiconductor device according to claim 2,

wherein the anisotropic conductive adhesion bond comprises an anisotropic conductive film or an anisotropic conductive paste.

5. The semiconductor device according to claim 1,

wherein a circuit comprising the thin film transistor amplifies an output of the photoelectric conversion element.

6. The semiconductor device according to claim 1,

wherein the photoelectric conversion element comprises a photoelectric conversion layer formed with amorphous silicon or microcrystal silicon.

7. The semiconductor device according to claim 1,

wherein the first substrate is a plastic substrate or a substrate formed with an organic resin material.

8. The semiconductor device according to claim 1,

wherein the second substrate is a plastic substrate or a substrate formed with an organic resin material.

9. The semiconductor device according to claim 1,

wherein the semiconductor device is a cellular phone.

29. The semiconductor device according to claim 1,

wherein the thin film transistor comprises an active layer including silicon.

4. A semiconductor device comprising:

a thin film transistor formed adjacent to a first substrate;

a photoelectric conversion element formed adjacent to a second substrate; and

a sealing material and a metal layer both sandwiched between the first substrate and the second substrate which are opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates;

wherein the thin film transistor and the photoelectric conversion element are connected electrically through the metal layer.

10. The semiconductor device according to claim 4,

wherein a circuit comprising the thin film transistor amplifies an output of the photoelectric conversion element.

11. The semiconductor device according to claim 4,

wherein the photoelectric conversion element comprises a photoelectric conversion layer formed with amorphous silicon or microcrystal silicon.

12. The semiconductor device according to claim 4,

wherein the first substrate is a plastic substrate or a substrate formed with an organic resin material.

13. The semiconductor device according to claim 4,

wherein the second substrate is a plastic substrate or a substrate formed with an organic resin material.

14. The semiconductor device according to claim 4,

wherein the semiconductor device is a cellular phone.

30. The semiconductor device according to claim 4,

wherein the thin film transistor comprises an active layer including silicon.

15. A semiconductor device comprising:

a thin film transistor formed adjacent to a first substrate;

a photoelectric conversion element formed adjacent to a second substrate; and

an adhesion bond and conductive particles sandwiched between the first substrate and the second substrate which are opposed to each other;

wherein the thin film transistor and the photoelectric conversion element are connected electrically through the conductive particles.

16. The semiconductor device according to claim 15,

wherein the adhesion bond comprises an anisotropic conductive adhesion bond.

17. The semiconductor device according to claim 16,

wherein the anisotropic conductive adhesion bond comprises an anisotropic conductive film or an anisotropic conductive paste.

18. The semiconductor device according to claim 15,

wherein a circuit comprising the thin film transistor amplifies an output of the photoelectric conversion element.

19. The semiconductor device according to claim 15,

wherein the photoelectric conversion element comprises a photoelectric conversion layer formed with amorphous silicon or microcrystal silicon.

20. The semiconductor device according to claim 15,

wherein the first substrate is a plastic substrate or a substrate formed with an organic resin material.

21. The semiconductor device according to claim 15,

wherein the second substrate is a plastic substrate or a substrate formed with an organic resin material.

22. The semiconductor device according to claim 15,

wherein the semiconductor device is a cellular phone.

31. The semiconductor device according to claim 15,

wherein the thin film transistor comprises an active layer including silicon.

23. A semiconductor device comprising:

a thin film transistor formed adjacent to a first substrate;

a photoelectric conversion element formed adjacent to a second substrate; and

a sealing material and a metal layer both sandwiched between the first substrate and the second substrate which are opposed to each other;

wherein the thin film transistor and the photoelectric conversion element are connected electrically through the metal layer.

24. The semiconductor device according to claim 23,

wherein a circuit comprising the thin film transistor amplifies an output of the photoelectric conversion element.

25. The semiconductor device according to claim 23,

wherein the photoelectric conversion element comprises a photoelectric conversion layer formed with amorphous silicon or microcrystal silicon.

26. The semiconductor device according to claim 23,

wherein the first substrate is a plastic substrate or a substrate formed with an organic resin material.

27. The semiconductor device according to claim 23,

wherein the second substrate is a plastic substrate or a substrate formed with an organic resin material.

28. The semiconductor device according to claim 23,

wherein the semiconductor device is a cellular phone.

32. The semiconductor device according to claim 23,

wherein the thin film transistor comprises an active layer including silicon.