DEVICES AND METHODS FOR PREVENTING CAPACITOR LEAKAGE
First Claim
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1. A semiconductor device, comprising:
- a contact plug having a top flange; and
a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric, with the top flange of the contact plug fitting against the capacitor.
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Abstract
Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench
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Citations
12 Claims
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1. A semiconductor device, comprising:
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a contact plug having a top flange; and a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric, with the top flange of the contact plug fitting against the capacitor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a semiconductor device, comprising:
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forming a contact plug in a first insulating layer; forming a second insulating layer overlying the contact plug and the first insulating layer; forming a capacitor opening in the second insulating layer down to the contact plug with an overlay shift, the capacitor opening comprising a trench portion below the insulating layer, exposing at least part of the sidewall of the contact plug; and recessing the contact plug; and forming a capacitor on the recessed contact plug. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification