Forming Seal Ring in an Integrated Circuit Die
First Claim
1. A device comprising:
- a first die having a substrate, the substrate having formed thereon an active circuit region having one or more semiconductor devices;
a plurality of metal interconnect layers formed over the substrate, including a top metal interconnect layer;
a through-silicon via (TSV) extending from the top metal interconnect layer through the substrate;
a seal ring interposed between the active region and the TSV, the seal ring comprising a plurality of stacked features formed in respective ones of the plurality of metal interconnect layers.
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Abstract
The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a three dimensional (3D) stacking die structure. The TSVs may be utilized to provide electrical connections between components in different dies of the 3D stacking die structure. A seal ring is formed in the inter-metal dielectric (IMD) layers of an IC die, enclosing an active circuit region. The real ring is formed prior to the formation of the TSVs, preventing moistures or other undesired chemical agents from diffusing into the active circuit region during the subsequent processes of forming TSVs.
111 Citations
20 Claims
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1. A device comprising:
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a first die having a substrate, the substrate having formed thereon an active circuit region having one or more semiconductor devices; a plurality of metal interconnect layers formed over the substrate, including a top metal interconnect layer; a through-silicon via (TSV) extending from the top metal interconnect layer through the substrate; a seal ring interposed between the active region and the TSV, the seal ring comprising a plurality of stacked features formed in respective ones of the plurality of metal interconnect layers. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a semiconductor device, the method comprising:
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forming one or more semiconductor devices in an active circuit region of a first semiconductor die; forming one or more inter-metal dielectric (IMD) layers over a front-side surface of the first semiconductor die; forming interconnect metal features in the active circuit region, the interconnect metal features being coupled to the one or more semiconductor devices and being formed in respective ones of the one or more IMD layers; forming a seal ring in the one or more IMD layers, the seal ring enclosing the interconnect metal features in the active circuit region; forming a recess in the one or more IMD layers and in the first semiconductor die, after the formation of the seal ring, the recess being separated from the active circuit region by the seal ring; and filling the recess with conductive material, thereby forming a through-silicon via (TSV). - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming through-silicon-vias (TSV) in a semiconductor device, the method comprising:
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providing a semiconductor substrate; forming one or more inter-metal dielectric (IMD) layers on the semiconductor substrate; forming one or more semiconductor devices in an active circuit region of the semiconductor substrate; forming a plurality of interconnect metal features in the IMD layers in the active circuit region; forming a seal ring in the IMD layers, the seal ring enclosing the plurality of interconnect metal features in the active circuit region; forming one or more recesses in a TSV region of the IMD layers and the semiconductor substrate, the TSV region being separated from active circuit region by the seal ring; and filling the one or more recesses with one or more conductive materials, thereby forming one or more TSVs. - View Dependent Claims (17, 18, 19, 20)
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Specification